Patents by Inventor Jung-bin Yun
Jung-bin Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240031698Abstract: An image sensor according to the present disclosure includes: a first pixel group, which includes a first pixel unit corresponding to a first color, and a plurality of first pixels arranged with an m×n form. The image sensor further includes a second pixel unit, which corresponds to a second color, and a plurality of second pixels arranged with the m×n form. The image sensor further includes a third pixel unit, which corresponds to a third color, and a plurality of third pixels arranged with the m×n form, and m and n are natural numbers greater than or equal to 3. A first micro lens is formed on the first pixel unit and shared by at least two adjacent first pixels in a first direction among the plurality of first pixels.Type: ApplicationFiled: February 21, 2023Publication date: January 25, 2024Inventors: Wonchul CHOI, Kyungho LEE, Heesang KWON, Seoyun PARK, Jung Bin YUN
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Publication number: 20230369357Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: July 20, 2023Publication date: November 16, 2023Inventors: Jung Bin Yun, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Patent number: 11817465Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: January 18, 2023Date of Patent: November 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Publication number: 20230275106Abstract: An image sensor is provided. The image sensor includes a substrate in which a first photoelectric conversion element is disposed, the substrate having a first surface and a second surface opposite the first surface, pixel separation patterns extending from the first surface of the substrate into the substrate, surrounding the first photoelectric conversion element, and defining a first pixel region in the substrate, a first vertical gate structure which extends in the first pixel region from the first surface of the substrate into the substrate and comprises a first portion disposed in the substrate and a second portion disposed on the first surface of the substrate, a second vertical gate structure which extends in the first pixel region from the first surface of the substrate into the substrate and comprises a first portion disposed in the substrate and a second portion disposed on the first surface of the substrate.Type: ApplicationFiled: October 14, 2022Publication date: August 31, 2023Inventors: Ji Hun KIM, Jung Bin YUN, Seung Joon LEE
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Publication number: 20230154946Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: January 18, 2023Publication date: May 18, 2023Inventors: Jung Bin Yun, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Publication number: 20230144373Abstract: A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.Type: ApplicationFiled: November 9, 2022Publication date: May 11, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hwanwoong KIM, Jihun KIM, Jung Bin YUN, Seungjoon LEE, Hongsuk LEE
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Patent number: 11581344Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: August 11, 2021Date of Patent: February 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Publication number: 20220337771Abstract: A camera module includes pixels each including first to fourth sub-pixels, a row driver connected to the pixels through row lines, an analog-to-digital conversion circuit connected to the pixels through column lines and converting signals of the column lines into digital values, and a logic circuit. Each of the first to fourth sub-pixels includes a first region and a second region. Each of the first and second regions includes a photo detector. In response to the row driver activating signals of half or less of the photo detectors included in one pixel among the pixels, the analog-to-digital conversion circuit generates a first signal. The logic circuit generates an auto focus signal based on the first signal.Type: ApplicationFiled: December 30, 2021Publication date: October 20, 2022Inventors: JUNG BIN YUN, KYUNGHO LEE, EUN SUB SHIM, TAESUB JUNG
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Publication number: 20220293645Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.Type: ApplicationFiled: May 27, 2022Publication date: September 15, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Jung Bin YUN, Kyungho LEE, Sung-Ho CHOI
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Publication number: 20220247949Abstract: An electronic device includes an image sensor that generates image data, and an image processor that processes the image data. The image sensor includes a pixel array including pixels repeatedly disposed along a row direction and a column direction. Each of pixels belonging to a first row of rows of the pixel array includes sub-pixels each connected to one of a first transmission metal line, a second transmission metal line, and a third transmission metal line. In response to signals respectively applied to the first to third transmission metal lines, at least a part of charges integrated at the sub-pixels of the pixels belonging to the first row from among the pixels is diffused to corresponding floating diffusion areas.Type: ApplicationFiled: November 10, 2021Publication date: August 4, 2022Inventors: Jung Bin YUN, Kyungho LEE
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Publication number: 20220216250Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.Type: ApplicationFiled: October 1, 2021Publication date: July 7, 2022Inventors: SEUNGJOON LEE, JUNG BIN YUN, KYUNGHO LEE, JIHUN KIM, JUNGHYUNG PYO
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Patent number: 11348959Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.Type: GrantFiled: January 29, 2020Date of Patent: May 31, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Kyungho Lee, Sung-Ho Choi
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Publication number: 20210375965Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: August 11, 2021Publication date: December 2, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Patent number: 11134210Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.Type: GrantFiled: June 11, 2020Date of Patent: September 28, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-bin Yun, Kyung-ho Lee
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Patent number: 11121157Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: December 12, 2019Date of Patent: September 14, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Patent number: 11011559Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: December 12, 2019Date of Patent: May 18, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Patent number: 10950639Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: December 12, 2019Date of Patent: March 16, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Publication number: 20200304742Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.Type: ApplicationFiled: June 11, 2020Publication date: September 24, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-bin YUN, Kyung-ho LEE
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Patent number: 10785432Abstract: An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.Type: GrantFiled: September 5, 2018Date of Patent: September 22, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jung wook Lim, Sung Soo Choi, Eun Sub Shim, Jung Bin Yun, Sung-Ho Choi
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Patent number: 10728482Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.Type: GrantFiled: December 21, 2017Date of Patent: July 28, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-bin Yun, Kyung-ho Lee