Abstract: The present invention relates to a compound capable of lowering the flammability of a non-aqueous electrolyte when included in the non-aqueous electrolyte and improving the life properties of a battery by forming an electrode-electrolyte interface which is stable at high temperatures and low in resistance, and relates to a compound represented by Formula I descried herein, a non-aqueous electrolyte solution and a lithium secondary battery both including the compound, n, m, Ak, and X are described herein.

Abstract: A non-aqueous electrolyte solution for a lithium secondary battery and a lithium secondary battery including the same are described herein. Specifically, the non-aqueous electrolyte solution for a lithium secondary battery includes a lithium salt, a first solvent including a non-fluorine-based solvent, a second solvent including a fluorine-based carbonate solvent, and a third solvent including a fluorine-based acetate solvent, wherein the fluorine-based carbonate solvent and the fluorine-based acetate solvent are included in a weight ratio of 1:0.5 to 1:1, and a mixed amount of the fluorine-based carbonate solvent and the fluorine-based acetate solvent may be in a range of 3.0 wt % to 30 wt % based on a total weight of the non-aqueous electrolyte solution for a lithium secondary battery.

Abstract: A method for manufacturing a light modulation device is provided. The light modulation device is capable of removing defects such as orientation irregularities. The light modulation device further improves the orientation state in the light modulation device that adjusts orientation of a liquid crystal compound or the like with a liquid crystal alignment film and a pressure-sensitive adhesive layer or adhesive layer.

Abstract: Discussed is a bolting device that effectively protects an internal configuration of a battery pack and increases manufacturing efficiency during a bolting operation. The bolting device for manufacturing a battery pack includes an electric screwdriver provided with a rotation motor; a driver bit connected to the rotation motor to enable a rotation movement and configured to rotate a bolt; a bit guide member provided with a hollow tube such that the driver bit is inserted into an inside of the hollow tube to be movable; and a guide jig provided with a main body configured to be mounted on an upper portion of a pack housing, the main body having a plate shape and having at least one through hole, and a fixing member inserted into the through hole and mounted therein, and having an insertion hole.

Abstract: The present invention relates to a coating composition which is for a wiper blade and is for forming a coating layer for lowering the coefficient of friction of a wiper blade rubber base on glass, the coating composition including a lubricant additive and a solvent, wherein the lubricant additive is functionalized graphene capable of self-adhesion to the wiper blade rubber base.

Abstract: A cassette for ultra-thin glass includes a pair of plates spaced apart from and facing each other, and a plurality of supports mounted between the pair of plates and including a plurality of mounting grooves that support sides of sheets of ultra-thin glass. Each of the plurality of mounting grooves includes an inclined portion inclined toward a middle of each of the plurality of mounting grooves, and a straight portion extending from the inclined portion and having a constant width in an axial direction of the plurality of supports. A height of the straight portion in a radial direction of the plurality of supports is equal to or greater than a height of the inclined portion in the radial direction.

Abstract: An amplifier may include first and second terminals to receive first and second input signals and a differential amplifier providing differential amplification of the first and second input signals. The differential amplifier may include a first differential amplifier stage to receive the first input signal and a second differential amplifier stage to receive the second input signal. The amplifier may further include a first bias circuit to bias the first differential amplifier stage, where the first bias circuit is connected to the second input terminal to provide anti-phase bias control of the first differential amplifier stage. The amplifier may further include a second bias circuit to bias the second differential amplifier stage, where the second bias circuit is connected to the first input terminal to provide anti-phase bias control of the second differential amplifier stage.

Abstract: Disclosed is a ruthenium etchant composition containing periodic acid and ammonium ions and having a pH of 6 to 7.5. Further disclosed are a pattern formation method including a step of etching a ruthenium metal film using the etchant composition, a method of manufacturing a display device array substrate by employing the pattern formation method, and a display device array substrate manufactured by the method.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.

Abstract: Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Abstract: The invention provides a method of regulating U1 activity associated with its splicing role as well as its role in protecting pre-mRNAs from premature termination by cleavage and polyadenylation, thereby modulating expression of a gene or genes. In one embodiment, the invention includes compositions and methods for regulating gene expression and treating diseases associated with dysregulated gene expression.

Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.

Abstract: The invention provides a method of regulating U1 activity associated with its splicing role as well as its role in protecting pre-mRNAs from premature termination by cleavage and polyadenylation, thereby modulating expression of a gene or genes. In one embodiment, the invention includes compositions and methods for regulating gene expression and treating diseases associated with dysregulated gene expression.

Abstract: Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.