Abstract: Disclosed is a thin film transistor, an array substrate, a method for manufacturing the same, and a display device. The method includes: forming a source and drain on a base substrate and forming a semiconductor layer. Between the step of forming the source and drain and the step of forming the semiconductor layer, the method further includes: forming a diffusion barrier layer. Metal atoms diffused from the source and drain and passing through the diffusion barrier layer react with a part of the semiconductor layer near the source and drain, and a metal transition layer containing metal silicide is formed.

Abstract: Embodiments of the present application provide a thin film transistor and a method of manufacturing the same, an array substrate and a display panel. The thin film transistor comprises, successively from the bottom up, a gate, a first common electrode located in the same layer as the gate, a gate insulating layer, an active layer, a pixel electrode, a source-drain electrode layer and a passivation layer located above the layer where the gate is located, and a second common electrode located on the passivation layer, and the thin film transistor further comprises at least one connection electrode located in a same layer as the pixel electrode, wherein at least two via holes are provided between the first common electrode and the second common electrode so as to connect the first common electrode and the second common electrode through the connection electrode.

Abstract: A method for manufacturing an oxide semiconductor TFT array substrate is provided, which including: successively depositing an oxide semiconductor active layer and a transparent conductive layer on a base substrate without breaking vacuum; and forming patterns of an active layer and a transparent conductive layer. An oxide semiconductor TFT array substrate is further provided.

Abstract: Disclosed is a thin film transistor, an array substrate, a method for manufacturing the same, and a display device. The method includes: forming a source and drain on a base substrate and forming a semiconductor layer. Between the step of forming the source and drain and the step of forming the semiconductor layer, the method further includes: forming a diffusion barrier layer. Metal atoms diffused from the source and drain and passing through the diffusion barrier layer react with a part of the semiconductor layer near the source and drain, and a metal transition layer containing metal silicide is formed.

Abstract: The present invention provides a display substrate comprising a plurality of pixel regions and a thin film transistor provided in each of the pixel regions. Each of the pixel regions comprises a transmissive region and a reflective region, and a protection layer is provided on the thin film transistor. A portion of the protection layer corresponding to the reflective region is a protrusion portion, and a portion of the protection layer corresponding to the thin film transistor is provided with a via therein.

Abstract: Disclosed is a thin film transistor, an array substrate, a method for manufacturing the same, and a display device. The method includes: forming a source and drain on a base substrate and forming a semiconductor layer. Between the step of forming the source and drain and the step of forming the semiconductor layer, the method further includes: forming a diffusion barrier layer. Metal atoms diffused from the source and drain and passing through the diffusion barrier layer react with a part of the semiconductor layer near the source and drain, and a metal transition layer containing metal silicide is formed.

Abstract: Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.

Abstract: Embodiments of the present application provide a thin film transistor and a method of manufacturing the same, an array substrate and a display panel. The thin film transistor comprises, successively from the bottom up, a gate, a first common electrode located in the same layer as the gate, a gate insulating layer, an active layer, a pixel electrode, a source-drain electrode layer and a passivation layer located above the layer where the gate is located, and a second common electrode located on the passivation layer, and the thin film transistor further comprises at least one connection electrode located in a same layer as the pixel electrode, wherein at least two via holes are provided between the first common electrode and the second common electrode so as to connect the first common electrode and the second common electrode through the connection electrode.

Abstract: A method for manufacturing an oxide semiconductor TFT array substrate is provided, which including: successively depositing an oxide semiconductor active layer and a transparent conductive layer on a base substrate without breaking vacuum; and forming patterns of an active layer and a transparent conductive layer. An oxide semiconductor TFT array substrate is further provided.

Abstract: Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.

Abstract: The present disclosure provides an array substrate, its manufacturing method and a display device. The array substrate includes a gate electrode, a gate insulation layer formed on the gate electrode, an active layer formed on the gate insulation layer, source/drain electrodes arranged at a layer identical to the active layer, and a pixel electrode arranged at a layer identical to the active layer. The active layer includes a metal oxide semiconductor, and the source/drain electrodes and the pixel electrode each include an ion-implanted metal oxide semiconductor.

Abstract: The present invention provides a display substrate comprising a plurality of pixel regions and a thin film transistor provided in each of the pixel regions. Each of the pixel regions comprises a transmissive region and a reflective region, and a protection layer is provided on the thin film transistor. A portion of the protection layer corresponding to the reflective region is a protrusion portion, and a portion of the protection layer corresponding to the thin film transistor is provided with a via therein.