Patents by Inventor Junhui Oh
Junhui Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7550388Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.Type: GrantFiled: March 21, 2005Date of Patent: June 23, 2009Assignee: Fujima IncorporatedInventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
-
Patent number: 7485162Abstract: A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.Type: GrantFiled: September 29, 2004Date of Patent: February 3, 2009Assignee: Fujimi IncorporatedInventors: Tsuyoshi Matsuda, Tatsuhiko Hirano, Junhui Oh, Atsunori Kawamura, Kenji Sakai
-
Publication number: 20080265205Abstract: A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR?COOH and a general formula ROR?OPO3H2 where R represents an alkyl group or an alkylphenyl group, R? represents a polyoxyethylene group, polyoxypropylene group, or poly(oxyethylene/oxypropylene) group. The pH of the polishing composition is 8 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.Type: ApplicationFiled: September 1, 2006Publication date: October 30, 2008Applicant: FUJIMI INCORPORATEDInventors: Junhui Oh, Hiroshi Asano, Katsunobu Hori
-
Publication number: 20080104893Abstract: To provide a polishing composition suitable for use to polish a silicon dioxide film, particularly for use to polish a silicon dioxide film formed on a silicon substrate or a polysilicon film, and a polishing method by means of such a polishing composition. The polishing composition of the present invention comprises a colloidal silica having a degree of association of more than 1, and an acid, and has a pH of from 1 to 4. The acid is preferably at least one member selected from the group consisting of a carboxylic acid and a sulfonic acid. This polishing composition preferably further contains an anionic surfactant. The anionic surfactant is preferably a sulfuric acid ester or a sulfonate.Type: ApplicationFiled: October 24, 2007Publication date: May 8, 2008Applicant: FUJIMI INCORPORATEDInventor: Junhui OH
-
Publication number: 20070176140Abstract: A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is used in chemical mechanical polishing for removing the remaining part of the portion of a conductive layer positioned outside the trench and the portion of a barrier layer positioned outside the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidizing agent, and water. The second polishing composition contains colloidal silica, an acid, an anticorrosive, and a completely saponified polyvinyl alcohol.Type: ApplicationFiled: September 30, 2004Publication date: August 2, 2007Inventors: Tsuyoshi Matsuda, Tatsuhiko Hirano, Junhui Oh, Atsunori Kawamura, Kenji Sakai
-
Publication number: 20060134908Abstract: A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent.Type: ApplicationFiled: November 4, 2005Publication date: June 22, 2006Inventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Katsunobu Hori, Kenji Sakai
-
Publication number: 20060060974Abstract: A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.Type: ApplicationFiled: August 30, 2005Publication date: March 23, 2006Applicant: FUJIMI INCORPORATEDInventors: Tatsuhiko Hirano, Junhui Oh, Akifumi Sakao, Atsunori Kawamura, Katsunobu Hori
-
Publication number: 20050215060Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.Type: ApplicationFiled: March 21, 2005Publication date: September 29, 2005Applicant: Fujimi IncorporatedInventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
-
Publication number: 20050208761Abstract: A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.Type: ApplicationFiled: March 21, 2005Publication date: September 22, 2005Applicant: Fujimi IncorporatedInventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
-
Publication number: 20050108949Abstract: A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water This polishing composition is capable of suppressing the occurrence of the dishing.Type: ApplicationFiled: September 29, 2004Publication date: May 26, 2005Inventors: Tsuyoshi Matsuda, Tatsuhiko Hirano, Junhui Oh, Atsunori Kawamura, Kenji Sakai