Patents by Inventor Junichi Aoyama
Junichi Aoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240194909Abstract: There is provided a hydrogen consumption quantity measurement system that, even in a case in which there is a possibility that leakage hydrogen is contained in exhaust gas from a fuel cell or a hydrogen engine, makes it possible to accurately determine a total quantity of hydrogen consumption of the fuel cell without having to modify a vehicle or the like. This hydrogen consumption quantity measurement system measures a hydrogen consumption quantity in a test body, which is formed by a moving body or portion thereof that includes a hydrogen reactor that causes hydrogen to undergo a chemical reaction, and that utilizes energy obtained from this chemical reaction, and includes an oxygen concentration sensor that measures a concentration of oxygen contained in exhaust gas from the test body.Type: ApplicationFiled: March 31, 2022Publication date: June 13, 2024Applicant: HORIBA, LTD.Inventors: Takuji OIDA, Shigeru NAKATANI, Junichi AOYAMA, Yoshihiro YOKOTA
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Publication number: 20240096235Abstract: An information processing apparatus (1) included in a welding training system includes a transmittance adjuster (14) capable of adjusting a transmittance of a window of a welding helmet in virtual space in multiple grades, and a display controller (17) configured to cause a display of an HMD (2) to display a situation of a welding operation in the virtual space at an illuminance corresponding to the adjusted transmittance. The transmittance adjuster (14) adjusts the transmittance based on a skill level of a trainee determined by a skill level determination unit (13).Type: ApplicationFiled: January 12, 2022Publication date: March 21, 2024Inventors: Yuichiro Aoyama, Yasuo Oomori, Junichi Oono, Hideaki Ogura, Hiroaki Taniyama, Akihiro Yamamoto, Hitoshi Kawasaki
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Publication number: 20200355837Abstract: A silicon drift detector includes a housing and a silicon drift detection element that is disposed inside the housing. The housing includes an opening that is not closed. The silicon drift detection element includes a top surface facing the opening, and a light shielding film is provided on the top surface.Type: ApplicationFiled: December 14, 2018Publication date: November 12, 2020Inventors: Daisuke MATSUNAGA, Junichi AOYAMA, Yuji OKUBO, Seiji IKAWA
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Patent number: 10571021Abstract: In a control device of a vehicle power transmission device, a first meshing clutch has a drive power source side meshing member coupled to a power transmission member, an auxiliary drive wheel side meshing member coupled to the power transmission member, and an actuator engaging or releasing the drive power source side meshing member and the auxiliary drive wheel side meshing member, and when a rotation speed difference between a rotation speed of the drive power source side meshing member and a rotation speed of the auxiliary drive wheel side meshing member is larger than a predefined value at the time when a first meshing clutch is brought into an engaged state, a clamping pressure on a transmission belt is increased as compared to when a rotation speed difference is equal to or less than a predefined value.Type: GrantFiled: November 7, 2018Date of Patent: February 25, 2020Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Junichi Aoyama, Masayuki Tsujita, Tsutomu Kawanishi, Taichi Washio
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Publication number: 20190359357Abstract: A space-debris capturing device includes a harpoon driven into target debris as space debris to be removed. The harpoon includes a first harpoon part having a large diameter, and a second harpoon part having a diameter smaller than the diameter of the first harpoon part and protruding from a leading surface in the direction of the drive of the first harpoon part into the target debris.Type: ApplicationFiled: July 16, 2019Publication date: November 28, 2019Applicant: IHI CorporationInventors: Kazuo SHIMAMURA, Shinya Fukushige, Kozue Hashimoto, Satomi Kawamoto, Yasushi Ohkawa, Junichi Aoyama
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Publication number: 20190145515Abstract: In a control device of a vehicle power transmission device, a first meshing clutch has a drive power source side meshing member coupled to a power transmission member, an auxiliary drive wheel side meshing member coupled to the power transmission member, and an actuator engaging or releasing the drive power source side meshing member and the auxiliary drive wheel side meshing member, and when a rotation speed difference between a rotation speed of the drive power source side meshing member and a rotation speed of the auxiliary drive wheel side meshing member is larger than a predefined value at the time when a first meshing clutch is brought into an engaged state, a clamping pressure on a transmission belt is increased as compared to when a rotation speed difference is equal to or less than a predefined value.Type: ApplicationFiled: November 7, 2018Publication date: May 16, 2019Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Junichi AOYAMA, Masayuki TSUJITA, Tsutomu KAWANISHI, Taichi WASHIO
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Publication number: 20140340675Abstract: A method and an apparatus for discriminating a cardiac tissue using Raman scattering are provided which enable a noninvasive discrimination of the cardiac tissue to be accurately performed. The discrimination method includes: a step of irradiating a sample containing a cardiac tissue with excitation light; a step of detecting Raman scattering light from the sample; an analysis step of analyzing the detected Raman scattering light by a multivariate analysis using as an index, Raman scattering spectra which are specific to at least a living myocardial tissue, a necrotic myocardial tissue, a granulation tissue and a fibrotic tissue, respectively; and a step of discriminating the cardiac tissue in accordance with analysis results obtained in the analysis step.Type: ApplicationFiled: May 15, 2014Publication date: November 20, 2014Applicants: KYOTO PREFECTURAL PUBLIC UNIVERSITY CORPORATION, The Graduate School for the Creation of New Photonics Industries, HORIBA, Ltd.Inventors: Tetsuro Takamatsu, Yoshinori Harada, Takeo Minamikawa, Nanae Muranishi, Katsuhiro Ishii, Juichiro Ukon, Junichi Aoyama
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Patent number: 7589322Abstract: An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement.Type: GrantFiled: June 28, 2006Date of Patent: September 15, 2009Assignee: Horiba, Ltd.Inventors: Kentaro Nishikata, Yutaka Saijo, Shigeru Kakinuma, Junichi Aoyama, Satoshi Ohashi
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Patent number: 7271487Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: GrantFiled: March 28, 2005Date of Patent: September 18, 2007Assignee: Sony CorporationInventor: Junichi Aoyama
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Publication number: 20070023655Abstract: An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement.Type: ApplicationFiled: June 28, 2006Publication date: February 1, 2007Inventors: Kentaro Nishikata, Yutaka Saijo, Shigeru Kakinuma, Junichi Aoyama, Satoshi Ohashi
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Patent number: 7074706Abstract: The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.Type: GrantFiled: April 22, 2005Date of Patent: July 11, 2006Assignee: Sony CorporationInventors: Junichi Aoyama, Toshio Kobayashi
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Patent number: 7064441Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: GrantFiled: March 28, 2005Date of Patent: June 20, 2006Assignee: Sony CorporationInventor: Junichi Aoyama
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Patent number: 7012023Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: GrantFiled: February 3, 2005Date of Patent: March 14, 2006Assignee: Sony CorporationInventor: Junichi Aoyama
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Publication number: 20050191841Abstract: The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.Type: ApplicationFiled: April 22, 2005Publication date: September 1, 2005Inventors: Junichi Aoyama, Toshio Kobayashi
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Patent number: 6927158Abstract: A method of forming a semiconductor device to have a gap between wirings formed on a substrate, which gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at zero degrees Celsius. In the method, the following steps are performed: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer; (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings; (D) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0.degree. C. through the gas permeable film into the gap; and (E) forming a gas impermeable film on the gas permeable film.Type: GrantFiled: August 22, 2003Date of Patent: August 9, 2005Assignee: Sony CorporationInventors: Junichi Aoyama, Toshio Kobayashi
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Publication number: 20050167845Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: ApplicationFiled: March 28, 2005Publication date: August 4, 2005Inventor: Junichi Aoyama
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Publication number: 20050167846Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: ApplicationFiled: March 28, 2005Publication date: August 4, 2005Inventor: Junichi Aoyama
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Publication number: 20050133925Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: ApplicationFiled: February 3, 2005Publication date: June 23, 2005Inventor: Junichi Aoyama
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Patent number: 6876079Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.Type: GrantFiled: February 25, 2002Date of Patent: April 5, 2005Assignee: Sony CorporationInventor: Junichi Aoyama
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Patent number: 6765297Abstract: A semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.Type: GrantFiled: March 27, 2002Date of Patent: July 20, 2004Assignee: Sony CorporationInventors: Junichi Aoyama, Toshio Kobayashi