Publication number: 20180268887
Abstract: A magnetoresistive element according to an embodiment includes: a first nonmagnetic layer; a first magnetic layer; a second magnetic layer disposed between the first nonmagnetic layer and the first magnetic layer; a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third nonmagnetic layer disposed between the second nonmagnetic layer and the second magnetic layer; and a third magnetic layer disposed between the second nonmagnetic layer and the third nonmagnetic layer, wherein elements constituting the second magnetic layer at least partially differ from elements constituting the third magnetic layer, a relative permittivity of the first nonmagnetic layer is at least 10, and the third nonmagnetic layer contains at least one element selected from the group consisting of Nb, Ta, Mo, W, Hf, Zr, Ti, Sc, V, Cr, Mn, Fe, Co, Ni, Mg, Al, Ru, Ir, Rh, Pd, Pt, Cu, Ag, and Au.
Type:
Application
Filed:
September 11, 2017
Publication date:
September 20, 2018
Applicant:
TOSHIBA MEMORY CORPORATION
Inventors:
Masaki ENDO, Tadaomi Daibou, Shumpei Omine, Junichi Ito, Akiyuki Murayama, Takeshi Iwasaki
Patent number: 9991314
Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.
Type:
Grant
Filed:
September 12, 2016
Date of Patent:
June 5, 2018
Assignee:
KABUSHIKI KAISHA TOSHIBA
Inventors:
Naoki Hase, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito