Abstract: The present invention improves estimation accuracy. An information processing system includes: an acquisition unit (102) configured to acquire adjustment information based on a feature value of learning data used for generation of a learned model that estimates a health condition of a patient or a subject; a processing unit (103) configured to perform processing on a biological sample to be judged on the basis of the adjustment information; and an estimation unit (104) configured to estimate a diagnosis result by inputting measurement data acquired by the processing to the learned model.

Abstract: A plurality of through-hole conductors include a first through-hole conductor and a second through-hole conductor between coil conductors adjacent each other. Each of the first through-hole conductor and the second through-hole conductor includes a first end and a second end. The first end included in the second through-hole conductor is coupled to the second end included in the first through-hole conductor, and has a width larger than a width of the second end included in the first through-hole conductor. The first end included in the first through-hole conductor has a width larger than the width of the second end included in the first through-hole conductor. The second end included in the second through-hole conductor has a width smaller than the width of the first end included in the second through-hole conductor.

Abstract: A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion having a base layer formed on an upper face thereof, and a base electrode contacts with the base layer and has a floating extension which extends from the semiconductor mesa portion to a space on the outer side with respect to the semiconductor mesa portion. The floating extension is used as a contact portion for a base wiring line to the base electrode.

Abstract: A semiconductor device, able to be produced while suppressing the occurrence of mesa shaped abnormalities without restriction as to the pattern layout, the type of etchant used, etc., provided with a semiconductor mesa portion including a stack of a collector layer, a base layer, and an emitter layer on a substrate and functioning as an active region of a bipolar transistor, a base contact pad mesa portion separated from this by a predetermined distance and having a height the same as the top surface of the base layer, and a conductor layer integrally formed with a base electrode connected to the base layer, a base contact pad electrode formed on the base contact pad mesa portion in a region other than near the edges of the top surface of the base contact pad mesa portion, and an interconnect connecting these, and a method of producing the same.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion having a base layer formed on an upper face thereof, and a base electrode contacts with the base layer and has a floating extension which extends from the semiconductor mesa portion to a space on the outer side with respect to the semiconductor mesa portion. The floating extension is used as a contact portion for a base wiring line to the base electrode.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: A semiconductor device, able to be produced while suppressing the occurrence of mesa shaped abnormalities without restriction as to the pattern layout, the type of etchant used, etc., provided with a semiconductor mesa portion including a stack of a collector layer, a base layer, and an emitter layer on a substrate and functioning as an active region of a bipolar transistor, a base contact pad mesa portion separated from this by a predetermined distance and having a height the same as the top surface of the base layer, and a conductor layer integrally formed with a base electrode connected to the base layer, a base contact pad electrode formed on the base contact pad mesa portion in a region other than near the edges of the top surface of the base contact pad mesa portion, and an interconnect connecting these, and a method of producing the same.

Abstract: To provide a semiconductor device which makes it possible to avoid deterioration in step coverage property at a gate electrode provided on an operating region, and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include operating region composed of multilayer films such as a channel layer, an electron supplying layer and other semiconductor layer and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

Abstract: A method for manufacturing a semiconductor device, comprising the steps of forming a first resist layer, an intermediate layer and a second resist layer sequentially on a substrate; forming an aperture by removing a portion of the second resist layer where a T-shaped gate is to be later formed; over-etching a portion of the intermediate layer opposed to the aperture thereby forming in the intermediate layer an aperture larger than the first-mentioned aperture; and forming, in the first resist layer, an aperture which is smaller than the aperture in the second resist layer which is positioned inside thereof. Due to the combination of such successive steps, the lift-off process required to form a desires T-shaped gate can be substantially improved.