Abstract: A method for producing a SiO.sub.2 glass material having regions changed in light refractive index is provided which comprises implanting at least 5.times.10.sup.19 Ge ions/cm.sup.3 into a SiO.sub.2 glass substrate, heat-treating the substrate at a temperature exceeding 300.degree. C., and exposing the substrate to an ultraviolet light. Also provided is a SiO.sub.2 glass material produced by the method.

Abstract: This invention provides a method of producing a diffraction grating of a spectroscope by applying light to a thin film of glass having characteristics such that a density change occurs with the change of a glass structure upon irradiation of light and volume expansion occurs irreversibly. The method comprises applying light to a diffraction grating formation of a surface of the thin film by applying light through a phase mask or applying interference light, and causing the light irradiation portion of glass to expand and to thereby form the diffraction grating. Light to be applied is generally laser beams of ultraviolet rays, such as an excimer laser, a Nd-YAG laser or UV higher harmonics of a dye laser. A laser beam of a visible light region can be used, too. Preferably, a silica single crystal plate is used for the substrate of the thin film, and sputter vacuum deposition is used for forming the thin film. The glass composition whose volume expands upon irradiation of light is GeO.sub.2 --SiO.sub.

Abstract: A process for producing a chalcogenide glass fiber which comprises placing a cylindrical chalcogenide glass preform vertically in a cylindrical crucible furnished with a nozzle in its bottom portion, heating the crucible only at vicinity of the nozzle, and continuously drawing the glass into a fiber with the temperature of the crucible at the vicinity of the nozzle being maintained at such a level that the viscosity of the glass is within the range of 10.sup.3 to 10.sup.7.5 poises.

Abstract: A method for purifying starting materials for chalcogenide glass is disclosed, which comprises contacting chalcogen starting materials at a high temperature with a metal which is more susceptible to oxidation than the chalcogen starting materials to allow the metal to react with oxygen contained as impurity in the chalcogen starting material to form an oxide of the metal, and then removing the metal and the oxide of the metal from the chalcogen starting materials.