Abstract: Disclosed is a charge transfer complex capable of obtaining a curable resin composition having an excellent balance between curability and storage stability when used as an epoxy-resin curing agent. The charge transfer complex has an imidazole moiety as an electron donor moiety. The charge transfer complex may be an assembly wherein electrons included in a compound (a) having an imidazole moiety are accepted by a compound (b) having an electron acceptor moiety, or may be a compound having an imidazole moiety and an electron acceptor moiety in its molecule, and the electron acceptor moiety accepts electrons included in the imidazole moiety.

Abstract: Provided is a curable resin composition exhibiting reduced or controlled shrinkage on curing. The composition includes (A) an epoxy resin, (B) a latent curing agent, and (C) a compound represented by formula (1): wherein X is an oxygen atom or a sulfur atom; R1 and R2 each independently represent a hydrogen atom, an alkyl group, or an aryl group; and R3 and R4 each independently represent a hydrogen atom, an alkyl group, or an aryl group, or R3 and R4 are connected to each other to represent a divalent group to form a ring.

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms).

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.

Abstract: Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R1 and R2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R1 and R2 that are plurally present may be the same or different.

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R1 and R2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R1 and R2 that are plurally present may be the same or different.

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R1 and R2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R1 and R2 that are plurally present may be the same or different.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: A material for chemical vapor deposition containing an organic silicon-containing compound represented by formula: HSiCl(NR1R2)(NR3R4), wherein R1 and R3 each represent C1-C4 alkyl or hydrogen; and R2 and R4 each represent C1-C4 alkyl. The material is particularly suitable as a material for forming a silicon nitride thin film on a substrate by chemical vapor deposition. The use of the material allows for film formation at low temperatures ranging from 300° to 500° C.