Patents by Inventor Junki Fujiyama

Junki Fujiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation system and ion implantation method
    Patent number: 6930316
    Abstract: In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.
    Type: Grant
    Filed: December 3, 2001
    Date of Patent: August 16, 2005
    Assignee: Ulvac, Inc.
    Inventors: Tsutomu Nishihashi, Junki Fujiyama, Yuzo Sakurada
  • Ion implantation system and ion implantation method
    Publication number: 20020066872
    Abstract: In an ion implantation system including (a) ion source means, (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate, the ion source means consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected, mass-separated ions from the ion source are led to the acceleration portion, and stencil mask means is arranged approximately to the semiconductor substrate in the end station chamber.
    Type: Application
    Filed: December 3, 2001
    Publication date: June 6, 2002
    Applicant: ULVAC Inc.
    Inventors: Tsutomu Nishihashi, Junki Fujiyama, Yuzo Sakurada