Abstract: The present invention provides a method for producing a phenylalanine derivative(s) having a quinazolinedione ring of formula (5), including steps comprising of reacting an acylphenylalanine derivative(s) of formula (1) with a carbonyl group-introducing reagent(s) and a derivative(s) of anthranilic acid to form an asymmetric urea intermediate(s); making the asymmetric urea intermediate(s) into a quinazolinedione compound(s) of formula (4) in the presence of a base(s); and N-alkylating quinazolinedione ring amide of the obtained quinazolinedione compounds with N-alkylation agents. This production method is an industrially applicable method for producing phenylalanine derivatives having a quinazolinedione skeleton, which are compounds highly useful as drugs having ? 4 integrin inhibiting activity.

Abstract: The present invention provides a method for producing a phenylalanine derivative(s) having a quinazolinedione ring of formula (5), including steps comprising of reacting an acylphenylalanine derivative(s) of formula (1) with a carbonyl group-introducing reagent(s) and a derivative(s) of anthranilic acid to form an asymmetric urea intermediate(s); making the asymmetric urea intermediate(s) into a quinazolinedione compound(s) of formula (4) in the presence of a base(s); and N-alkylating quinazolinedione ring amide of the obtained quinazolinedione compounds with N-alkylation agents. This production method is an industrially applicable method for producing phenylalanine derivatives having a quinazolinedione skeleton, which are compounds highly useful as drugs having ? 4 integrin inhibiting activity.

Abstract: The present invention provides a method for producing a phenylalanine derivative(s) having a quinazolinedione ring of formula (5), including steps comprising of reacting an acylphenylalanine derivative(s) of formula (1) with a carbonyl group-introducing reagent(s) and a derivative(s) of anthranilic acid to form an asymmetric urea intermediate(s); making the asymmetric urea intermediate(s) into a quinazolinedione compound(s) of formula (4) in the presence of a base(s); and N-alkylating quinazolinedione ring amide of the obtained quinazolinedione compounds with N-alkylation agents. This production method is an industrially applicable method for producing phenylalanine derivatives having a quinazolinedione skeleton, which are compounds highly useful as drugs having ? 4 integrin inhibiting activity.

Abstract: The present invention provides a method for producing a phenylalanine derivative(s) having a quinazolinedione ring of formula (5), including steps comprising of reacting an acylphenylalanine derivative(s) of formula (1) with a carbonyl group-introducing reagent(s) and a derivative(s) of anthranilic acid to form an asymmetric urea intermediate(s); making the asymmetric urea intermediate(s) into a quinazolinedione compound(s) of formula (4) in the presence of a base(s); and N-alkylating quinazolinedione ring amide of the obtained quinazolinedione compounds with N-alkylation agents. This production method is an industrially applicable method for producing phenylalanine derivatives having a quinazolinedione skeleton, which are compounds highly useful as drugs having ? 4 integrin inhibiting activity.

Abstract: In a charge pump circuit, a constant current circuit is disposed between an input power supply and an output capacitor, when a power supply is started to turn on, the operation of the charge pump circuit is stopped, and the output capacitor is charged up to a given voltage by the constant current circuit, and thereafter the normal operation of the charge pump is started to limit the rush current. When the power supply is started, the operation is conducted by an oscillator circuit having a small duty ratio, and thereafter the control is replaced by the PFM control having the normal duty ratio, to thereby reduce the rush current as compared with that of the conventional PFM control. When the power supply is started, a pre-driver including a current limiting element is used to drive a driver, resulting in such an advantage that the rush current is reduced as compared with that driven by the conventional pre-driver.

Abstract: In a charge pump circuit, a constant current circuit is disposed between an input power supply and an output capacitor, when a power supply is started to turn on, the operation of the charge pump circuit is stopped, and the output capacitor is charged up to a given voltage by the constant current circuit, and thereafter the normal operation of the charge pump is started to limit the rush current. When the power supply is started, the operation is conducted by an oscillator circuit having a small duty ratio, and thereafter the control is replaced by the PFM control having the normal duty ratio, to thereby reduce the rush current as compared with that of the conventional PFM control. When the power supply is started, a pre-driver including a current limiting element is used to drive a driver, resulting in such an advantage that the rush current is reduced as compared with that driven by the conventional pre-driver.

Abstract: A method of manufacturing a semiconductor detector for detecting light and radiation comprises the steps of providing a first semiconductor substrate of a first conductivity type, attaching a second substrate to the first semiconductor substrate through an insulating film, grinding the first semiconductor substrate from a surface thereof to a predetermined thickness, forming a MOS transistor on the ground surface of the first semiconductor substrate, removing the second substrate, and forming electrodes on the first semiconductor substrate for forming a depletion layer.

Abstract: An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate.

Abstract: A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 .mu.m or less and a peak density of 1.times.10.sup.19 atoms/cm.sup.3 or more. A method of manufacturing a photoelectric conversion semiconductor device is characterized by a step of ion-injecting boron or boron fluoride with a dose amount of 1.times.10.sup.16 to 5.times.10.sup.16 atoms/cm.sup.2 into a semiconductor substrate as an impurity.

Abstract: An edge image extraction light modulator forms an edge portion image corresponding to a boundary between two optically equalized portions of a liquid crystal layer. Each portion has a different bistable state and an edge portion optically distinct from the two optically equalized portions. An optical image is written onto the light valve while applying a voltage between two transparent electrode layers of the light valve to effect switching between a first stable optical axis and a second stable optical axis. The light valve is illuminated and the edge portion of the written image is read. A first and a second polarizer are in crossed-Nicols position so that the two optically equalized portions comprise a portion having the written image except for the edge portion thereof and a non-written portion. The edge portion is not optically equal to the two optically equal portions and can thus be detected.

Abstract: The liquid crystal device has a pair of flat glass substrates, a pair of dielectric multilayer film mirror, a plurality of transparent electrodes arranged in a matrix, a plurality of minute insulating films formed on inner face of the glass substrates, and a liquid crystal layer. A pair of dielectric multilayer film mirror constitute a Fabry-Perot etalon via the liquid crystal layer and enhance a contrast ratio. The minute insulating films are formed by physical vapor deposition and attain a uniform thickness, so that a liquid crystal device having a uniform cell gap is obtained.