Patents by Inventor Junqing Wu

Junqing Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11537934
    Abstract: Embodiments herein provide for a machine learning algorithm that generates models that are more interpretable and transparent than existing machine learning approaches. These embodiments identify, at a record level, the effect of individual input variables on the machine learning model. To provide those improvements, a reason code generator assigns monotonic relationships to a series of input variables, which are then incorporated into the machine learning algorithm as metadata. In some embodiments, the reason code generator creates records based on the monotonic relationships, which are used by the machine learning algorithm to generate predicted values. The reason code generator compares an original predicted value from the machine learning model to the predicted values from the machine learning model.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: December 27, 2022
    Assignee: Bluestem Brands, Inc.
    Inventors: Marick Sinay, Damien Benveniste, Peng Jiang, Philip Remmele, Junqing Wu, Mike Zhang
  • Patent number: 11511345
    Abstract: This invention relates to the nano metal material preparation technology field, especially to the preparation method of one kind, of nano-rings. This invention uses polyvinyl pyrrolidone of different molecular weights as surface-protecting agent and dissolves silver nitrate in the low molecular weight polyvinyl pyrrolidone ethylene glycol solvent under frozen conditions. Frozen conditions can slow down or inhibit silver ions from being reduced to zero-valent silver, to generate silver nanoparticles coated and complexed with both low and high molecular weight polyvinyl pyrrolidone. Polyvinyl pyrrolidone of different molecular weight shows different selective absorption of silver, and different stability makes it affect the speed of growth of silver atoms along different crystal faces to different extent, which is better for silver nano-ring production, with higher yield.
    Type: Grant
    Filed: August 18, 2018
    Date of Patent: November 29, 2022
    Assignee: SHENZHEN HUAKE-TEK CO., LTD.
    Inventors: Haibo Wang, Xiping Zeng, Shidong Jin, Junqing Wu, Xiaoming Li
  • Publication number: 20210138549
    Abstract: This invention relates to the nano metal material preparation technology field, especially to the preparation method of one kind, of nano-rings. This invention uses polyvinyl pyrrolidone of different molecular weights as surface-protecting agent and dissolves silver nitrate in the low molecular weight polyvinyl pyrrolidone ethylene glycol solvent under frozen conditions. Frozen conditions can slow down or inhibit silver ions from being reduced to zero-valent silver, to generate silver nanoparticles coated and complexed with both low and high molecular weight polyvinyl pyrrolidone. inyl pyrrolidone of different molecular weight shows different selective absorption of silver, and different stability makes it affect the speed of growth of silver atoms along different crystal faces to different extent, which is better for silver nano-ring production, with higher yield.
    Type: Application
    Filed: August 18, 2018
    Publication date: May 13, 2021
    Inventors: HAIBO WANG, XIPING ZENG, SHIDONG JIN, JUNQING WU, XIAOMING LI
  • Publication number: 20200097439
    Abstract: Embodiments herein provide for a machine learning algorithm that generates models that are more interpretable and transparent than existing machine learning approaches. These embodiments identify, at a record level, the effect of individual input variables on the machine learning model. To provide those improvements, a reason code generator assigns monotonic relationships to a series of input variables, which are then incorporated into the machine learning algorithm as metadata. In some embodiments, the reason code generator creates records based on the monotonic relationships, which are used by the machine learning algorithm to generate predicted values. The reason code generator compares an original predicted value from the machine learning model to the predicted values from the machine learning model.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 26, 2020
    Inventors: Marick Sinay, Damien Benveniste, Peng Jiang, Philip Remmele, Junqing Wu, Mike Zhang
  • Patent number: 9548404
    Abstract: Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: January 17, 2017
    Assignee: DONGFANG ELECTRIC (YIXING) MAGI SOLAR POWER TECHNOLOGY CO., LTD
    Inventors: Lun Huang, Chunhui Lu, Junqing Wu, Zerong Hou, Jinwei Wang
  • Publication number: 20150221787
    Abstract: Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes.
    Type: Application
    Filed: June 20, 2013
    Publication date: August 6, 2015
    Inventors: Lun Huang, Chunhui Lu, Junqing Wu, Zerong Hou, Jinwei Wang