Abstract: Provided is a microfluidic chip. The microfluidic chip includes a first substrate and a second substrate disposed opposite to each other and drive electrodes, first sensing electrodes and second sensing electrodes disposed on a side of the first substrate. A microfluidic channel is formed between the first substrate and the second substrate and configured to accommodate at least one droplet. Different drive voltage signals are applied to adjacent drive electrodes, so as to drive the at least one droplet to move. Detection signals are applied to the first sensing electrodes and the second sensing electrodes, and a position of the at least one droplet is determined according to a change in capacitance between one first sensing electrode and an electrode corresponding thereto and a change in capacitance between one second sensing electrode and an electrode corresponding thereto when the at least one droplet flows by.

Abstract: A coated abrasive article comprises a backing having first and second opposed major surfaces. A make layer is bonded to the first major surface. Agglomerate grinding aid particles are directly bonded to the make layer. At least a portion of the agglomerate grinding aid particles comprise grinding aid particles retained in a binder, and are arranged according to an open predetermined pattern. Abrasive particles are directly bonded to the make layer in spaces between the agglomerate grinding aid particles. A size layer is directly bonded to the make layer, agglomerate grinding aid particles, and abrasive particles. A method of making a coated abrasive article, in which the agglomerate grinding aid particles are deposited onto a curable make layer precursor prior to depositing abrasive particles onto the curable make layer precursor in spaces between the agglomerate grinding aid particles is also disclosed.

Abstract: The present invention provides a multi-modal data prediction method based on a causal Markov model, belonging to the technical field of intelligent traffic technology; the method of the present invention includes: collecting regional data and multi-modal traffic data of a research region; taking the time position, the regional point of interest and the weather information as conditional feature variables; taking the regional attraction factor, the bicycle demand factor, the taxi demand factor, the bus demand factor and the traffic speed factor as physical concept variables; taking the bicycle traffic flow, the taxi traffic flow, the bus traffic flow and the regional speed as multi-modal traffic data observation variables, and describing the generation process of the multi-modal traffic flow by using a causal Markov process; solving the causal Markov process by using a neural network, and training a built neural network for the multi-modal traffic data observation.

Abstract: A ranging method and an apparatus thereof, a storage medium, and a terminal device. By adding a processing unit into a hardware abstraction layer of the terminal device, a software method is thus used to replace a physical proximity sensor (Psensor); in addition, costs are effectively reduced.

Abstract: An urban data prediction method based on a generative causal interpretation model is provided. The generative causal interpretation model includes exogenous variables, spatio-temporal conditional parent variables, controlled causal transition functions, and spatio-temporal mixing functions. By inferring the model's exogenous variables, causal descriptors, spatio-temporal conditional parent variables, and other causal latent variables from the observation data and fitting the corresponding functions such as the controlled causal transfer function and the spatio-temporal mixing function, the invention can predict the spatio-temporal data in city level based on the model. The observation data of the urban complex system can be decomposed into causal descriptors with physical meanings. Under the influence of stable causal structure, the robustness and applicability of the model can be improved, so that the prediction results are more in line with the operation of urban complex systems.

Abstract: A ranging method and an apparatus thereof, a storage medium, and a terminal device. By adding a processing unit into a hardware abstraction layer of the terminal device, a software method is thus used to replace a physical proximity sensor (Psensor); in addition, costs are effectively reduced.

Abstract: Disclosed by the present application are a method for controlling brightness in mobile terminal display, a mobile terminal and a storage device, the method comprising: controlling an optical sensor and an acceleration sensor within a mobile terminal to respectively monitor in real time a change value for environmental brightness and a change value for angle of rotation; determining whether the change value for environmental brightness and the change value for angle of rotation as monitored by the mobile terminal are less than a preset brightness and a preset angle, respectively; and when yes, controlling the brightness in mobile terminal display to not change.

Abstract: Some embodiments include a method of forming crystalline semiconductor material. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The deposition is conducted at a temperature of less than or equal to 500° C. Some embodiments include a method of forming a transistor. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The semiconductor material includes germanium. The crystalline semiconductor structures are doped to form a configuration having a first portion over a second portion. Insulative material is formed adjacent the second portion. A transistor gate is formed along the insulative material.

Abstract: Disclosed by the present application are a method for controlling brightness in mobile terminal display, a mobile terminal and a storage device, the method comprising: controlling an optical sensor and an acceleration sensor within a mobile terminal to respectively monitor in real time a change value for environmental brightness and a change value for angle of rotation; determining whether the change value for environmental brightness and the change value for angle of rotation as monitored by the mobile terminal are less than a preset brightness and a preset angle, respectively; and when yes, controlling the brightness in mobile terminal display to not change.

Abstract: Some embodiments include a method of forming crystalline semiconductor material. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The deposition is conducted at a temperature of less than or equal to 500° C. Some embodiments include a method of forming a transistor. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The semiconductor material includes germanium. The crystalline semiconductor structures are doped to form a configuration having a first portion over a second portion. Insulative material is formed adjacent the second portion. A transistor gate is formed along the insulative material.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

Abstract: Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.

Abstract: Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.