Patents by Inventor Junya Hiraga

Junya Hiraga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cvd method for forming silicon nitride film
    Publication number: 20060286817
    Abstract: A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.
    Type: Application
    Filed: May 21, 2004
    Publication date: December 21, 2006
    Inventors: Hitoshi Kato, Kohei Fukushima, Masato Yonezawa, Junya Hiraga