Abstract: An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

Abstract: A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

Abstract: There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.

Abstract: An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

Abstract: A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

Abstract: There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.