Abstract: A collapsible antenna (10) comprises an elongate boom (12) having a main axis (14) and a plurality of elongate radiating elements (16) having respective first ends (18.1) and respective second ends (18.2). At least some of the elongate radiating elements are flexible and are mounted at the respective first ends to the boom in longitudinally spaced relation. Regions towards the respective second ends of the at least some of the elongate radiating elements engage a flexible rope (20). The flexible rope forms part of a frame (22) which is manipulatable relative to the boom between a first collapsed configuration and a second operative configuration wherein the at least some radiating elements are in an operative configuration relative to the boom.

Abstract: A collapsible antenna (10) comprises an elongate boom (12) having a main axis (14) and a plurality of elongate radiating elements (16) having respective first ends (18.1) and respective second ends (18.2). At least some of the elongate radiating elements are flexible and are mounted at the respective first ends to the boom in longitudinally spaced relation. Regions towards the respective second ends of the at least some of the elongate radiating elements engage a flexible rope (20). The flexible rope forms part of a frame (22) which is manipulatable relative to the boom between a first collapsed configuration and a second operative configuration wherein the at least some radiating elements are in an operative configuration relative to the boom.

Abstract: In a method for operating an SRAM MOS transistor memory cell, the memory cell comprises a 6-transistor memory cell composed of two inverters with feedback, each of which is connected to a bit line via a selection transistor which is driven by a word line. Both selection transistors are switched on when writing information to the memory cell. Only the first selection transistor is switched on, the other selection transistor remaining switched off, when reading the contents of the cell. In this way, the charge on only one bit line is changed when reading.