Abstract: A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snuggly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

Abstract: A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets are each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snugly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

Abstract: A method for establishing a desired distribution of partial gas pressure along a surface of a substrate when vacuum treating such substrate includes feeding a gas towards the substrate through openings distributed all along the entire periphery of the substrate. The gas is fed or removed at a gas line which communicates exclusively with a set of the openings.

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Abstract: Within a vacuum recipient plasma enhanced atomic layer deposition (PEALD) is performed in that precursor gas is inlet from a precursor gas inlet and a monomolecular layer is deposited on a substrate by adsorption. Subsequently a reactive gas is inlet through a reactive gas inlet and the monomolecular layer on the substrate is reacted, enhanced by UHF plasma which is generated to be distributed along a geometric locus which surrounds a substrate carrier and thus the substrate on this carrier.

Abstract: A plasma etching device including a vacuum chamber for at least one plate shaped substrate with side walls looping around a central axis. The chamber including a substrate handling opening, at least one inlet for a reductive gas and an inert gas and a pedestal formed as a substrate support in a central lower area of an etching compartment of the chamber. The pedestal mounted in the chamber in an electrically isolated manner and connected to a first pole of a first voltage source, thereby forming a first electrode. The pedestal encompassing first heating and cooling means. A second electrode is electrically connected to ground and surrounds the first electrode. A third electrode is electrically connected to ground and includes at least one upper shield and a screen-shield both being thermally and electrically connected to each other, whereby the screen-shield loops around the etching compartment. At least one of the upper shield and the screen shield includes at least one further heating and/or cooling means.

Abstract: A vacuum treatment chamber includes a vacuum recipient and therein a screen. Within the screen there is provided a stationary substrate support. Within the side wall of the vacuum recipient, there is provided a substrate handling opening and in the screen, a substrate handling cut-out. A drivingly, moveable screen-shutter frees or covers the substrate handling cut-out in the screen. Thereby, horizontal loading and un-loading (L/UL) of a substrate to the stationary substrate support is possible, although establishing an overall closed screen, once a substrate is treated in the vacuum treatment chamber.

Abstract: A method of treating a substrate or of manufacturing a treated substrate includes the following steps: a) first treating a substrate in a first atmosphere of a first pressure, b) subsequently, second treating the first treated substrate in a second atmosphere of a second pressure, wherein the second temperature of the substrate is different from the first temperature and the second pressure is lower than the first pressure, c) between steps a) and b) locking in the first treated substrate from the first atmosphere into the second atmosphere, d) during locking in, heating or cooling the first treated substrate from the first temperature towards the second temperature.

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

Abstract: The method of providing a permeation-barrier layer system on a substrate includes establishing a permeation seal by depositing, by PVD and/or by ALD, an inorganic material layer system, thereby providing adhesion of the inorganic material layer system and crack-sealing by depositing a polymer material layer system on the substrate and the inorganic material layer system on the polymer material system.

Abstract: A layer deposition apparatus having a substrate carrier, an inorganic material layer deposition station with a PVD layer deposition chamber and an ALD layer deposition chamber as well as a polymer deposition station. A control unit controls intermittent exposure of a substrate on the substrate carrier to the deposition effect of the inorganic material layer deposition station and from the polymer deposition station.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Abstract: A heater or cooler chamber for a batch of more than one workpiece includes a heat storage block. In the block a multitude of pockets are provided, whereby each of the pockets may be closed or opened by a controllably operated door. A heater or cooler arrangement is applied. The pockets are tailored to surround a workpiece applied therein in a non-contact closely spaced manner.

Abstract: A heater or cooler chamber for a batch of more than one workpiece includes a heat storage block. In the block a multitude of pockets are provided, whereby each of the pockets may be closed or opened by a controllably operated door. A heater or cooler arrangement is applied. The pockets are tailored to surround a workpiece applied therein in a non-contact closely spaced manner.

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Abstract: A heater or cooler chamber for a batch of more than one workpiece includes a heat storage block. In the block a multitude of pockets are provided, whereby each of the pockets may be closed or opened by a controllably operated door. A heater or cooler arrangement is applied. The pockets are tailored to surround a workpiece applied therein in a non-contact closely spaced manner.