Abstract: A technique of improving the performance of a secondary battery is provided. A secondary battery according to an embodiment includes a first electrode, a second electrode, a first layer disposed on the first electrode and including a first n-type oxide semiconductor, a second layer disposed on the first layer and including a second n-type oxide semiconductor material and a first insulating material, a third layer which is disposed on the second layer and is a solid electrolyte layer, and a fourth layer disposed on the third layer and including hexagonal Ni(OH)2 microcrystals.

Abstract: A method for manufacturing oxide semiconductor secondary cells concurrently and evenly on a plurality of chips. A method for manufacturing a chip on which an oxide semiconductor secondary cell is mounted, the oxide semiconductor secondary cell that is formed by layering a first electrode, a charging function layer, and a second electrode being layered on a circuit. The method includes a layering process to layer and form the oxide semiconductor secondary cells integrally at regions corresponding to a plurality of chips formed on a wafer without separately forming oxide semiconductor secondary cells at regions corresponding to the respective chips, and a separating process to perform separation into individual oxide semiconductor secondary cells corresponding to the respective chips by performing pattern etching on the integrally-formed oxide semiconductor secondary cells to eliminate regions not corresponding to the respective chips except for regions corresponding to the respective chips.

Abstract: The electricity storage device includes: a first conductivity-type first oxide semiconductor; a solid electrolyte layer disposed on the first oxide semiconductor layer, the solid electrolyte layer including a solid electrolyte enabling proton movement; an insulator layer disposed between the solid electrolyte layer and the first oxide semiconductor layer, the insulator layer including an insulating material; and a second conductivity-type second oxide semiconductor layer disposed on the solid electrolyte layer. Provided is the electricity storage device having the increased electricity storage capacity and improved reliability that can be charged without degradation even when the charging voltage is increased.

Abstract: A method for manufacturing oxide semiconductor secondary cells concurrently and evenly on a plurality of chips. A method for manufacturing a chip on which an oxide semiconductor secondary cell is mounted, the oxide semiconductor secondary cell that is formed by layering a first electrode, a charging function layer, and a second electrode being layered on a circuit. The method includes a layering process to layer and form the oxide semiconductor secondary cells integrally at regions corresponding to a plurality of chips formed on a wafer without separately forming oxide semiconductor secondary cells at regions corresponding to the respective chips, and a separating process to perform separation into individual oxide semiconductor secondary cells corresponding to the respective chips by performing pattern etching on the integrally-formed oxide semiconductor secondary cells to eliminate regions not corresponding to the respective chips except for regions corresponding to the respective chips.

Abstract: A battery having desired characteristics and a method of charging and discharging a battery are provided. A battery according to an embodiment of the present invention includes: a first electrode layer (6); a second electrode layer (7); and a charging layer (3) including an n-type metal oxide semiconductor and an insulating material, a charge voltage generated between the first electrode layer (6) and the second electrode layer (7) being applied to the charging layer (3). On a surface of the charging layer (3), a region in which the second electrode layer (7) is formed is sandwiched between regions in which the second electrode layer (7) is not formed.

Abstract: According to the present invention, an excellent battery is provided. A battery according to an exemplary embodiment of the present invention includes a first electrode layer (6), a second electrode layer (7), and a charging element (3) to which a charging voltage between the first and second electrode layers is applied. The charging element (3) can form an energy level in a band gap by causing a photoexcited structural change of an n-type metal oxide semiconductor covered with an insulating substance and thereby capture an electron. For example, the battery has a configuration in which the charging element (3) is formed in a three-dimensional shape.