Abstract: A lithographic apparatus comprises an immersion fluid system and an interferometric temperature detection system. The immersion fluid system is configured to provide immersion fluid to an exposure system. The interferometric temperature detection system is configured to measure a temperature of the immersion fluid.

Abstract: A system and method provides high speed variable attenuators. The attenuators can be used within a lithographic apparatus to control intensity of radiation in one or more correction pulses used to correct a dose of the radiation following an initial pulse of radiation.

Abstract: A lithographic projection apparatus includes an illumination system, an interchangeable upper optics module, and a lower optics module. The illumination system provides a beam of radiation. The interchangeable upper optics module receives the beam and includes, sequentially, a beam splitter that splits the beam into portions, an aperture plate, and a plurality of reflecting surfaces. The lower optics module receives portions of the beam from respective ones the reflecting surfaces and directs the portions of the beam onto a substrate. Interference fringes or contact hole patterns are formed on the substrate using the portions of the beam.

Abstract: A system and method provides high speed variable attenuators. The attenuators can be used within a lithographic apparatus to control intensity of radiation in one or more correction pulses used to correct a dose of the radiation following an initial pulse of radiation.

Abstract: A lithographic apparatus comprises an immersion fluid system and an interferometric temperature detection system. The immersion fluid system is configured to provide immersion fluid to an exposure system. The interferometric temperature detection system is configured to measure a temperature of the immersion fluid.

Abstract: An embodiment of a symmetry forming device for an alignment system can include an interferometer, a compensator, and an analyzer. The interferometer can be configured to receive a light beam, where the light beam can be produced from a light source or from combining beams from a plurality of light sources. Further, the interferometer can be configured to split the light beam into two beams, rotate one beam 180 degrees with respect to the other beam about an axis of rotation, and recombine the two beams to form a recombined beam. The compensator can be configured to adjust a path length of either the combined or the recombined beam in first and second polarization directions to form an adjusted light beam. The analyzer can be configured to pass a polarization direction or an amplitude and phase profile of either the recombined or adjusted light beam, where the recombined or adjusted light beam is directed onto a substrate.

Abstract: A system and method provides high speed variable attenuators. The attenuators can be used within a lithographic apparatus to control intensity of radiation in one or more correction pulses used to correct a dose of the radiation following an initial pulse of radiation.

Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

Abstract: Beam shearing apparatus for introducing a lateral shear between the components of a light beam. The apparatus is an optical assembly having a polarizing interface and input and output facets and two reflecting surfaces one of which is arranged at an angle generally opposite the input facet and the other of which is arranged at an angle generally opposite the output facet.

Abstract: A focus system that includes a calibration subsystem and a control subsystem. The control subsystem, which includes a control sensor, is in close proximity to the exposing of an image. The calibration subsystem, which includes a calibration sensor and a control sensor, is located remotely from, or off-axis with respect to, the exposing of an image. By separating calibration and control functions, the functional requirements can be separated into two (or more) types of sensors.

Abstract: An optical reduction system with polarization dose sensitive output for use in the photolithographic manufacture of semiconductor devices having variable compensation for reticle retardation before the long conjugate end. The variable compensation component(s) before the reticle provides accurate adjustment of the polarization state at or near the reticle. The variable compensation components can be variable wave plates, layered wave plates, opposing mirrors, a Berek's compensator and/or a Soleil-Babinet compensator. The catadioptric optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

Abstract: A system and method include a pattern generating portion that is used to pattern an object via a projection system. The pattern generating portion includes active and inactive areas. The pattern generating portion patterns light traveling towards the active areas and the projection system projects the patterned light onto the object. The pattern generating portion directs light traveling towards inactive areas away from the object.

Abstract: Coherent illumination is used to illuminate a symmetrical alignment mark with an image rotation interferometer producing two images of the alignment mark, rotating the images 1800 with respect to each other, and recombining the images interferometrically. The recombined images interfere constructively or destructively, in an amplitude and or polarization sense depending upon the method of recombination, when the alignment sensor is located at the center of the alignment mark. The rotation interferometer is preferably a solid glass assembly made of a plurality of prisms. A detector extracts the alignment information from the image rotation interferometer. The resulting center of the alignment mark is accurately determined. A relatively large number of different alignment mark patterns may be utilized, as long as the alignment mark patterns exhibit one hundred and eighty degree symmetry. Parallel lines, a grid pattern, or a checkerboard grating may be used.

Abstract: A focus system that includes a calibration subsystem and a control subsystem. The control subsystem, which includes a control sensor, is in close proximity to the exposing of an image. The calibration subsystem, which includes a calibration sensor and a control sensor, is located remotely from, or off-axis with respect to, the exposing of an image. By separating calibration and control functions, the functional requirements can be separated into two (or more) types of sensors.

Abstract: An optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter-wave plates operating near the long conjugate end. A quarter-wave plate after the reticle provides linearly polarized light at or near the beamsplitter. A quarter-wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle. Additional quarter-wave plates are used to further reduce transmission loss and asymmetries from feature orientation. The optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

Abstract: Apparatus for measuring angular changes in the direction of travel of a light beam comprising at least one beam shearing assembly for separating, preferably orthogonally polarized, components of the light beam and introducing a lateral shear between them. An analyzer operates on the components to provide them with a common polarization state. A lens focuses the commonly polarized components of the light beam to a spot in a detector plane, and a detector operates to generate an electrical signal having a phase that varies in accordance with the angular change of the light beam in at least one plane. Electronic means receive the electrical signal, determines the phase therefrom, and converts the phase to the angular change in the direction of travel of the light beam.

Abstract: A focus system that includes a calibration subsystem and a control subsystem. The control subsystem, which includes a control sensor, is in close proximity to the exposing of an image. The calibration subsystem, which includes a calibration sensor and a control sensor, is located remotely from, or off-axis with respect to, the exposing of an image. By separating calibration and control functions, the functional requirements can be separated into two (or more) types of sensors.

Abstract: An optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter-wave plates operating near the long conjugate end. A quarter-wave plate after the reticle provides linearly polarized light at or near the beamsplitter. A quarter-wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle. Additional quarter-wave plates are used to further reduce transmission loss and asymmetries from feature orientation. The optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.