Abstract: A method and apparatus for session management function reselection. A method performed by an access and mobility function includes selecting a second session management function (SMF) to serve a session of a user equipment (UE). The session of the UE is currently served by a first SMF and an access network. The method further includes sending a create session management context request comprising a reason of selecting the second SMF to serve the session of the UE to the second SMF. The reason indicates that the session of the UE is still served by the access network. The method further includes receiving a create session management context response comprising a session resource modify request from the second SMF. The session resource modify request includes access network tunnel information of the access network. The method further includes sending the session resource modify request to the access network.

Abstract: The invention provides Al2O3 dispersion-strengthened Ti2AlN composites, wherein Ti2AlN matrix and Al2O3 strengthening phase both are reactively formed in situ. The volume fraction of Al2O3 is 5% to 50%; the particle size of Al2O3 ranges from 500 nm to 2 ?m, with the mean size of Al2O3 particles about 0.8 ?m to 1.2 ?m; the shape of Ti2AlN grain is plate-like about 80 nm to 120 nm thick and 0.5 ?m to 2 ?m long. The composites exhibit excellent deformability at high temperature under compression and flexure stresses, and possess excellent oxidation resistance at 1100° C. to 1350° C. for long time (100 h). The composites show typical metallic conductor behavior and the electrical resistivity at room temperature is 0.3 to 0.8 ??·m. The invention also provides a method for preparing the same: First, nanoparticles in Ti—Al binary system were prepared in continuous way by hydrogen plasma-metal reaction (HPMR) using Ti—Al alloy rods with Al content 20% to 60% by atom, or pure Al rods and pure Ti rods.

Abstract: The invention provides Al2O3 dispersion-strengthened Ti2AlN composites, wherein Ti2AlN matrix and Al2O3 strengthening phase both are reactively formed in situ. The volume fraction of Al2O3 is 5% to 50%; the particle size of Al2O3 ranges from 500 nm to 2 ?m, with the mean size of Al2O3 particles about 0.8 ?m to 1.2 ?m; the shape of Ti2AlN grain is plate-like about 80 nm to 120 nm thick and 0.5 ?m to 2 ?m long. The composites exhibit excellent deformability at high temperature under compression and flexure stresses, and possess excellent oxidation resistance at 1100° C. to 1350° C. for long time (100 h). The composites show typical metallic conductor behavior and the electrical resistivity at room temperature is 0.3 to 0.8 ??·m. The invention also provides a method for preparing the same: First, nanoparticles in Ti—Al binary system were prepared in continuous way by hydrogen plasma-metal reaction (HPMR) using Ti—Al alloy rods with Al content 20% to 60% by atom, or pure Al rods and pure Ti rods.