Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.

Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.

Abstract: This invention relates to a packaging structure and method of an image sensor module. The method comprises: providing a transparent substrate having a first patterned conductive layer; carrying an image sensor integrated circuit chip having a photosensitive active area and at least one passive chip on the transparent substrate, wherein the photosensitive active area faces the transparent substrate; forming an insulating build-up film over the transparent substrate; and forming a plurality of conductive vias in the insulating build-up film wherein the ends of the conductive vias are connected with the passive chip or the first patterned conductive layer of the transparent substrate while the other ends of the conductive vias are exposed on the surface of the insulating build-up film. The packaging method is capable of down-sizing the construction of the image sensor module and simplifying the processing steps.

Abstract: An electronic circuit package has a thin-film circuit integrated with the ceramic substrate. The thin-film circuit includes at least two passive circuit elements joined by an integrated electrical interconnect. At least one active power electronic component mounted on the ceramic substrate and is electrically connected with the integrated thin-film circuit.

Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.

Abstract: This invention relates to a packaging structure and method of an image sensor module. The method comprises: providing a transparent substrate having a first patterned conductive layer; carrying an image sensor integrated circuit chip having a photosensitive active area and at least one passive chip on the transparent substrate, wherein the photosensitive active area faces the transparent substrate; forming an insulating build-up film over the transparent substrate; and forming a plurality of conductive vias in the insulating build-up film wherein the ends of the conductive vias are connected with the passive chip or the first patterned conductive layer of the transparent substrate while the other ends of the conductive vias are exposed on the surface of the insulating build-up film. The packaging method is capable of down-sizing the construction of the image sensor module and simplifying the processing steps.

Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.

Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.

Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.

Abstract: This invention relates to a packaging structure and method of an image sensor module. The method comprises: providing a transparent substrate having a first patterned conductive layer; carrying an image sensor integrated circuit chip having a photosensitive active area and at least one passive chip on the transparent substrate, wherein the photosensitive active area faces the transparent substrate; forming an insulating build-up film over the transparent substrate; and forming a plurality of conductive vias in the insulating build-up film wherein the ends of the conductive vias are connected with the passive chip or the first patterned conductive layer of the transparent substrate while the other ends of the conductive vias are exposed on the surface of the insulating build-up film. The packaging method is capable of down-sizing the construction of the image sensor module and simplifying the processing steps.

Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.

Abstract: This invention relates to a packaging structure and method of an image sensor module. The method comprises: providing a transparent substrate having a first patterned conductive layer; carrying an image sensor integrated circuit chip having a photosensitive active area and at least one passive chip on the transparent substrate, wherein the photosensitive active area faces the transparent substrate; forming an insulating build-up film over the transparent substrate; and forming a plurality of conductive vias in the insulating build-up film wherein the ends of the conductive vias are connected with the passive chip or the first patterned conductive layer of the transparent substrate while the other ends of the conductive vias are exposed on the surface of the insulating build-up film. The packaging method is capable of down-sizing the construction of the image sensor module and simplifying the processing steps.

Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.

Abstract: A method for forming a wafer level package incorporating a multiplicity of elastomeric blocks as stress buffering layer and package formed are described. The method incorporates the step of forming metal lines in-between the plurality of IC dies on a wafer during the same process used for forming the metal vias. The metal lines are subsequently removed by either a mechanical method such as dicing with a diamond saw or by a chemical method such as wet etching. The method allows the fabrications of a wafer level package that has a multiplicity of elastomeric blocks formed on top as stress buffering layer without the CTE mismatch problem with other layers on the wafer.

Abstract: A metal bumping structure on the input/output connector of a substrate or wafer, which is a metal conductor composed of multiple metal layers overlap the connector pad, characterized in that the overlapped outer or upper metal layer is thinner than the inner or lower metal layer, and the outer or upper metal layer that form the pillar style whose conductivity, connectivity and corrosion resist are better than the inner or lower metal layer, such that the bumping connector has better conductivity, connectivity and not easy to be corroded. It combines the photoresist, exposure, development with the electroless plating method to form the patterns and shapes of the expected object; wherein, the photoresist is to limit the deposition direction of the electroless, plating. If no limit on the electroless plating, it will cause isotropic deposition, as to simultaneously strive upward and around increasing; thus the photoresist is to assist with the electroless plating to form expected patterns and shapes.

Abstract: A method for forming a wafer level package incorporating a multiplicity of elastomeric blocks as stress buffering layer and package formed are described. The method incorporates the step of forming metal lines in-between the plurality of IC dies on a wafer during the same process used for forming the metal vias. The metal lines are subsequently removed by either a mechanical method such as dicing with a diamond saw or by a chemical method such as wet etching. The method allows the fabrications of a wafer level package that has a multiplicity of elastomeric blocks formed on top as stress buffering layer without the CTE mismatch problem with other layers on the wafer.

Abstract: A method for forming a wafer level package by incorporating an insulating pad of an elastic material under a dummy plug is described. In the method, a multiplicity of pads or islands formed of an elastic material is first formed on a pre-processed semiconductor substrate before a multiplicity of dummy via plugs are formed on top. The dummy via plugs are used as a support structure for building I/O redistribution lines (i.e. metal traces) thereon such that I/O bond pads may be built for supporting solder bumps or solder balls. The multiplicity of insulating pads is used for stress relief during a bonding process with the solder ball built on top without the conventional defect of cracking due to high elasticity of the material when a large area insulating layer is deposited on top.

Abstract: A method for fabricating a wafer level package and packages formed are disclosed. In the method, an elastomeric material layer is first deposited on top of a passivation layer by a printing, coating or laminating method to form a plurality of isolated islands. The islands may have a thickness of less than 100 &mgr;m. Metal traces for I/O redistribution are then formed to connect the isolated islands with bond pads provided on the surface of the wafer such that one bond pad is connected electrically to one isolated island. On top of the metal trace is then deposited an organic material for insulation with the metal trace on top of the isolated islands exposed. After an UBM layer is formed on top of the metal traces that are exposed on the isolated islands, solder balls of suitable size may be planted by a plating technique, a printing technique or a pick and place technique to complete the wafer level package.