Abstract: A thin film layered surface acoustic wave device includes a substrate, a GaN piezoelectric film, an AlN piezoelectric film and interdigital transducer electrodes. The GaN piezoelectric film is deposited on the substrate by chemical vapor deposition (CVD) or physical vapor deposition (PVD) method. Then the AlN piezoelectric film is deposited on top surface of the GaN piezoelectric film by the same way. Finally, the interdigital transducer electrodes are deposited on top surface of AlN piezoelectric film and form by etching of lift off method. Accordingly, high operating frequency and low loss surface acoustic wave devices can be produced which can be integrated with high frequency devices, such as HBT and HEMT, and different devices.

Abstract: A predictive energy management system for a hybrid vehicle that uses certain vehicle information, such as present location, time, 3-D maps and driving history, to determine engine and motor power commands. The system forecasts a driving cycle profile and calculates a driver power demand for a series of N samples based on a predetermined length of time, adaptive learning, etc. The system generates the optimal engine and motor power commands for each N sample based on the minimization of a cost function under constraint equations. The constraint equations may include a battery charge power limit, a battery discharge power limit, whether the battery state of charge is less than a predetermined maximum value, whether the battery state of charge is greater than a predetermined minimum value, motor power output and engine performance. The system defines the cost function as the sum of the total weighted predicted fuel consumed for each sample.

Abstract: A system and method for determining a commanded engine and motor torque to minimize fuel consumption and manage battery state of charge in a hybrid electric vehicle. The method includes determining a penalty factor value that dictates the usage of the battery. A cost value is determined for every feasible engine torque for a selected or demanded vehicle torque and speed request. Each cost value is determined by a fuel consumption value, a change in the battery state of charge and the penalty factor value. The change in the battery state of charge is determined from the motor power and a nominal battery state of charge. For a specific penalty factor, a look-up table for optimal engine torque is generated for different requested vehicle torques at various vehicle speeds. A separate look-up table is provided for each penalty factor.

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract: Zincselenide (ZnSe) thin films were grown on quartz glass and GaAs(100) substrates by continuous wave (CW) CO2 laser with ion beam assisted deposition. The ZnSe thin films are applied for multilayer anti-reflection coatings and blue light emitting devices. There are advantages to this technique over the Ion-Beam coating, MBE, MOCVD and PLD methods for fabricating layered semiconductors. It is cheaper and safer than Ion-Beam coating, MBE, MOCVD and others. It is cheaper and safer to heat the target locally by using a continuous wave laser so that contaminations and heat radiation are reduced. It is also cheaper and safer to avoid the splash of PLD.

Abstract: This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract: A polarized-light scatterometer for measuring the thickness of a film coated on the partial of a substrate, the film having a straight line edge on the surface of the substrate coated with the film.