Abstract: A catalyst composition for hydrogenating 4,4?-methylenedianiline derivatives is provided. The catalyst composition includes a carrier including aluminum oxide and magnesium oxide, a rhodium-ruthenium active layer loaded on the surface of the carrier, and a solvent including an organic amine. The weight percentage of magnesium oxide in the carrier is between 12% and 30%. A method for preparing 4,4?-methylene bis(cyclohexylamine) derivatives using the catalyst composition is also provided.

Abstract: A catalyst composition for hydrogenating 4,4?-methylenedianiline is provided. The catalyst composition includes a carrier including aluminum oxide and magnesium oxide, a rhodium-ruthenium active layer loaded on the surface of the carrier, and organic amine solvent. The weight percentage of magnesium oxide in the carrier is between 12% and 30%. A method for preparing 4,4?-methylene bis(cyclohexylamine) using the catalyst composition is also provided.

Abstract: A catalyst composition for hydrogenating 4,4?-methylenedianiline derivatives is provided. The catalyst composition includes a carrier including aluminum oxide and magnesium oxide, a rhodium-ruthenium active layer loaded on the surface of the carrier, and a solvent including an organic amine. The weight percentage of magnesium oxide in the carrier is between 12% and 30%. A method for preparing 4,4?-methylene bis(cyclohexylamine) derivatives using the catalyst composition is also provided.

Abstract: A process control method is provided for performing a deposition process on a plurality of wafers of a batch. The process control method includes: deciding a placement location of the wafers of the batch according to the history information of a tool and the product information of the batch; calculating a target value of each placement location according to the placement location of the wafers of the batch and the history information of the tool; calculating a process parameter according to the history information of the tool, the product information of the batch, and the target value of each placement location; and performing a deposition process according to the placement location of the wafers of the batch and the process parameter.

Abstract: A dispatch control method for a furnace process including the following steps is provided. Before a plurality of lots of wafers is loaded into a furnace, the characteristic variation value of each of the plurality of lots of wafers is calculated. The plurality of lots of wafers is ordered according to the size of the characteristic variation values. The plurality of lots of wafers is placed in the furnace in a descending order of the characteristic variation values corresponding to a plurality of locations in the furnace causing the characteristic variation values to change from smaller to larger.

Abstract: Method for preparing 2,5-furan dicarboxylic acid is provided, which includes contacting a furan composition with an oxidant in the presence of a catalyst system. The furan composition includes a first compound and a second compound. The first compound is a compound of Formula 1: In Formula 1, R1 is C1-9 alkyl group. The second compound is a compound of Formula 2, a compound of formula 3, a compound of Formula 4, a compound of Formula 5, or combinations thereof. In Formula 3, R2 is C1-9 alkyl group. The 2,5-furan dicarboxylic acid is a compound of Formula 6.

Abstract: A process control method is provided for performing a deposition process on a plurality of wafers of a batch. The process control method includes: deciding a placement location of the wafers of the batch according to the history information of a tool and the product information of the batch; calculating a target value of each placement location according to the placement location of the wafers of the batch and the history information of the tool; calculating a process parameter according to the history information of the tool, the product information of the batch, and the target value of each placement location; and performing a deposition process according to the placement location of the wafers of the batch and the process parameter.

Abstract: A dispatch control method for a furnace process including the following steps is provided. Before a plurality of lots of wafers is loaded into a furnace, the characteristic variation value of each of the plurality of lots of wafers is calculated. The plurality of lots of wafers is ordered according to the size of the characteristic variation values. The plurality of lots of wafers is placed in the furnace in a descending order of the characteristic variation values corresponding to a plurality of locations in the furnace causing the characteristic variation values to change from smaller to larger.