Patents by Inventor K. S. Ravi Chandran

K. S. Ravi Chandran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100176339
    Abstract: An article of jewelry can include a main body can comprise or consist essentially of a titanium boride. The main body can be a titanium boride such as titanium monoboride, titanium diboride, ternary boride, or quaternary boride. Additionally, a method of forming an article of jewelry having a titanium boride microstructure can include forming a powder precursor of a predetermined shape corresponding to a desired jewelry shape, growing titanium boride microstructure from the powder precursor to form a titanium boride main body, recovering the titanium boride main body, and finishing the recovered titanium boride main body into the jewelry shape.
    Type: Application
    Filed: January 12, 2009
    Publication date: July 15, 2010
    Inventor: K.S. Ravi Chandran
  • Patent number: 7501081
    Abstract: A nanostructured monolithic titanium boride (TiB) material and methods of forming such a material are disclosed and described. This material has a room-temperature four-point flexural strength about three times that of commercially available titanium diboride (TiB2). The achievement of nanostructured internal microstructural arrangement having a network of interconnected titanium monoboride whiskers affords a very high strength to this material above some of the best ceramic materials available in the market. The material contains a small amount of titanium and a densifier, but it is largely made of TiB phase with substantially no TiB2. The nanostructured monolithic titanium boride material can be formed by high temperature processing of a powder precursor having carefully selected weight and size distributions of titanium powder, titanium diboride powder, and densifier powder.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: March 10, 2009
    Assignee: University of Utah Research Foundation
    Inventor: K. S. Ravi Chandran
  • Patent number: 7459105
    Abstract: A nanostructured monolithic titanium boride (TiB) material and methods of forming such a material are disclosed and described. This material has a room-temperature four-point flexural strength about three times that of commercially available titanium diboride (TiB2). The achievement of nanostructured internal microstructural arrangement having a network of interconnected titanium monoboride whiskers affords a very high strength to this material above some of the best ceramic materials available in the market. The material contains a small amount of titanium, but it is largely made of TiB phase with substantially no TiB2. The nanostructured monolithic titanium boride material can be formed by high temperature processing of a powder precursor having carefully selected weight and size distributions of titanium and titanium diboride powders. Potential applications of this material can include wear resistant components such as die inserts for extrusion dies, nozzles, armor, electrodes for metal refining etc.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: December 2, 2008
    Assignee: University of Utah Research Foundation
    Inventor: K. S. Ravi Chandran
  • Patent number: 7264682
    Abstract: A borided titanium article can include a titanium mass having titanium monoboride whiskers infiltrating inward from a surface of the titanium mass to form an integral surface hardened region. The titanium mass can be almost any titanium based metal or alloy such as high purity titanium, commercial grade titanium, ?-titanium alloy, ?+? titanium alloy, ?-titanium alloy, titanium composite, and combinations thereof. Borided titanium articles can be formed by methods which include providing a titanium mass, contacting a surface of the titanium mass with a boron source medium, and heating the titanium mass and boron source medium to a temperature from about 700° C. to about 1600° C. The boron source medium can include a boron source and an activator selected to provide growth of titanium monoboride whiskers.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: September 4, 2007
    Assignee: University of Utah Research Foundation
    Inventors: K. S. Ravi Chandran, Shampa Aich