Patents by Inventor Kagetaka Ichikawa

Kagetaka Ichikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
    Patent number: 6478836
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30 c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30 c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: November 12, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Composition for polishing a semiconductor device and process for manufacturing a semiconductor device using the same
    Patent number: 6436835
    Abstract: An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of —COOH, —COOMx (wherein Mx is an atom or a functional group capable of substituting a H atom to form a salt), —SO3H or —SO3MY (wherein MY is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition.
    Type: Grant
    Filed: August 24, 2000
    Date of Patent: August 20, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Kagetaka Ichikawa
  • Composition for polishing a semiconductor device and process for manufacturing a semiconductor device using the same
    Patent number: 6410444
    Abstract: An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of —COOH, —COOMX (wherein MX is an atom or a functional group capable of substituting a H atom to form a salt), —SO3H or —SO3MY (wherein MY is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: June 25, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Kagetaka Ichikawa
  • Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
    Patent number: 6387139
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Grant
    Filed: October 3, 2001
    Date of Patent: May 14, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • COMPOSITION FOR POLISHING A SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20020045350
    Abstract: An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of —COOH, —COOMx (wherein Mx is an atom or a functional group capable of substituting a H atom to form a salt), —SO3H or —SO3Mx, (wherein My is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition.
    Type: Application
    Filed: September 17, 2001
    Publication date: April 18, 2002
    Applicant: SHOWA DENKO K.K.
    Inventors: Takanori Kido, Kagetaka Ichikawa
  • Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
    Publication number: 20020032989
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt.%. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Application
    Filed: October 3, 2001
    Publication date: March 21, 2002
    Applicant: SHOWA DENKO K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Polishing material composition and polishing method for polishing LSI devices
    Patent number: 6299659
    Abstract: A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 &mgr;m and the average value is about 0.01-1.0 &mgr;m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: October 9, 2001
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Fumio Tsujino, Kagetaka Ichikawa, Nobuo Uotani
  • Method for producing high density hexagonal boron nitride sintered article
    Patent number: 5064589
    Abstract: A method for producing a high density boron nitride sintered body includes mixing high purity hexagonal boron nitride powder with 0.1 to 20% by weight of at least one alkaline earth metal, then shaping the resultant mixture and firing the resultant shaped body in a non-oxidizing atmosphere containing nitrogen.
    Type: Grant
    Filed: February 26, 1991
    Date of Patent: November 12, 1991
    Assignee: Showa Denko K.K.
    Inventors: Kagetaka Ichikawa, Takao Noda