Abstract: A device for aligning light-emitting diodes (LEDs) by using a carrier substrate is provided. The carrier substrate defines a plurality of positioning grooves, and each positioning groove is configured for accommodating one of the LEDs. The device includes a carrying part for carrying the carrier substrate, a vibration part connected to the carrying part and for vibrating the carrier substrate, and a magnetic generator on a side of the carrier substrate away from the positioning grooves. A method for aligning LEDs is also provided.

Abstract: Disclosed are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a channel layer, a barrier layer and a P-type semiconductor layer sequentially stacked in a first direction. The P-type semiconductor layer includes a high-resistance passivation region and an activation region, and the high-resistance passivation region is located on a side, away from the substrate, of the activation region. When a semiconductor device is in an off state, the activation region of the P-type semiconductor layer may deplete 2DEG at the channel to realize an enhancement-mode device. The high-resistance passivation region is passivated to form a high-resistance structure, which may reduce a gate leakage current in the off state and improve power characteristics of the semiconductor device.

Abstract: A semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an n-type semiconductor layer, a functional layer, a p-type semiconductor layer, a first AlN layer and a first heavily doped n-type semiconductor layer arranged in sequence. The first AlN layer is provided to reduce the diffusion of p-type ions from the p-type semiconductor layer into the first heavily doped n-type semiconductor layer, to avoid a thicker tunneling junction caused by n-type ions/p-type ions co-doping, to improve the tunneling effect of carriers, to enhance the uniformity of the current density distribution of the first heavily doped n-type semiconductor layer injected into the p-type semiconductor layer, to solve the problem that the p-type semiconductor layer has low carrier mobility and high resistivity.

Abstract: Disclosed are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a channel layer, a barrier layer and a P-type semiconductor layer stacked sequentially. The barrier layer includes a first region and an oxygen-doped region, an oxygen concentration of the oxygen-doped region is higher than that of the first region, and a projection of the oxygen-doped region on the substrate at least partially overlaps with a projection of the P-type semiconductor layer on the substrate. When the semiconductor device is in an off state, 2DEG may be depleted to obtain an enhancement-mode device, and the oxygen-doped region with a larger unit cell parameter and a wider band gap is obtained by performing an oxygen doping process. Under an electric field, an energy band between the barrier layer and the P-type semiconductor bends more, which increases a barrier height, reduces leakage current, and improves power characteristics.

Abstract: The present application provides a system for unmanned aerial vehicle (UAV) parachute landing. An exemplary system includes a detector configured to detect at least one of a flight speed, a wind speed, a wind direction, a position, a height, and a voltage of a UAV. The system also includes a memory storing instructions and a processor configured to execute the instructions to cause the system to: determine whether to open a parachute of the UAV in accordance with a criterion, responsive to the determination to open the parachute of the UAV, stop a motor of the UAV that spins a propeller of the UAV, and open the parachute of the UAV after stopping the motor of the UAV for a first period.

Abstract: An interferometer suitable for Distributed Acoustic Sensing (DAS) is has two interferometer arms of different length, from which light is fed to an N-way optical coupler (N at least 2). In DAS, the light is backscattered light received from within an optical fiber. Incoming light is amplified by an adjustable factor, which may vary as a function of time in DAS. The N way optical coupler supplies combinations of light from the arms with different relative phase offsets to each other to N outputs. Phase shift between interfering components is computed from the light intensities detected by detectors at the N outputs. Correction of the computed phase shift is applied dependent on the value of the adjustable amplification factor. For this, one interferometer arm comprises a phase modulator, which is used obtaining measured detector output signals from the detectors with different phase shifts by the phase modulator when the value of the adjustable factor is used.

Abstract: An air pollution forecast management system including an air quality management device and an Internet of Things (IOT) cloud platform is disclosed. The air quality management device includes a dust particle sensing module being configured to sense gas exhausted from a smoke exhaust flue. The IoT cloud platform is configured to compute, at a second time after a first time, an exhaust gas set of the gas drifting from the first time to the second time by using current-observed meteorological data at the second time, receive a plurality of air-pollution sets at a plurality of geographic locations at the second time, compute a plurality of influencing results of the plurality of air-pollution sets respectively associated with the exhaust gas set, and generate a feedback instruction according to at least one of the plurality of influencing results to control gas emission of the smoke exhaust flue.

Abstract: The present invention provides a system for data mapping and storing in digital three-dimensional oscilloscope, wherein the fixed coefficients, which are calculated according the parameters and settings of a digital oscilloscope, are stored into a fixed coefficient memory CO RAM, the fixed coefficients are outputted to N fractional operation units through N?1 D flip-flop delay units to multiply with the acquired data x(n) and then be accumulated, thus N fractional calculus results are obtained. In this way, N fractional calculus results can be obtained by performing L/N fractional calculus operations. N fractional calculus results are sent to a signal processing and display module, in which they are converted into a display data through a drawing thread, and the display data are sent to LCD for displaying, thus the fractional calculus operation and display of a input signal in a digital oscilloscope is realized.

Abstract: Disclosed are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate including a first region and a second region surrounding the first region; a patterned structure, a first N-type heavily-doped semiconductor layer, a channel layer, and a second N-type heavily-doped semiconductor layer arranged on the first region sequentially; a source electrode connected to the second N-type heavily-doped semiconductor layer; a drain electrode connected to the first N-type heavily-doped semiconductor layer; and a gate electrode wrapping around sidewall of the channel layer.

Abstract: The present application relates to a field of bearing technology and relates to a recirculating roller bearing, including a front cover plate, a rear cover plate, an inner supporter, a sealing covering and a plurality of rolling carriers and at least one connector, in which the front cover plate and the rear cover plate are detachable connected on two sides of the inner supporter respectively; a circulating guiding path is defined by the front cover plate, the rear cover plate, the inner supporter and the sealing covering, the circulating guiding path includes a sealing portion and an opened load-bearing portion; the rolling carriers are filled in the circulating guiding path, each of the rolling carriers forms a rolling fit with the inner supporter, and each of the rolling carrier forms a rolling fit with a retractable fork when passing the opened load-bearing portion of the circulating guiding path.

Abstract: A random transient power test signal generator based on three-dimensional memristive discrete map, which utilizes a three-dimensional parallel bi-memristor Logistic map module to generate two pseudo-random sequences, and based on the sequences, uses two waveform output modules to generate transient voltage and transient current signals respectively, thus the random transient power testing signal is obtained. The map can significantly improve the complexity of chaos and greatly extend its range of chaos. In addition, a performance evaluation shows the map has more robust hyperchaotic behavior in much larger chaos range. Moreover, the random sequences generated by the map module combines with DDS, which can generate a transient power signal with completely random period, starting phase and ending phase.

Abstract: Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes an n-type layer, a multiple quantum well layer, and a p-type ion doping layer which are disposed in sequence. The p-type ion doping layer includes an activation region and a passivation region, and the activation region is an oxygen doping region. By selectively activating the p-type ion doping layer, a passivation region at an edge of a light-emitting unit and a passivation region under the first electrode are formed, so that uniformity of luminous exitance of a device may be improved, and current crosstalk in the p-type layer may be avoided without etching and filling insulating medium or cutting isolation channels between the light-emitting units, thereby simplifying a manufacturing process of the device, and achieving a more uniform luminous exitance and higher light extraction rate of the semiconductor device.

Abstract: A semiconductor structure includes a substrate, a first semiconductor layer, a second semiconductor layer and a p-type ion doping layer sequentially disposed, the p-type ion doping layer includes an activation region and a passivation region enclosing the activation region, and the activation region is an oxygen-doped region. Hydrogen doped in the p-type ion doping layer can be replaced by low-temperature annealing after a process of implementing oxygen ion-implantation, so as to improve activation efficiency of the p-type ion doping layer; the activation region in a gate electrode region and the passivation region in an non-gate electrode region are formed by using a method for selectively activating the p-type ion doping layer, avoiding etching of the p-type ion doping layer, and thus avoiding etching losses; and a plurality of patterned activation regions are obtained by selectively activating on a same substrate, which facilitates batch preparation of enhancement mode semiconductor devices.

Abstract: The present invention provides four-particle electrophoretic displays with improved driving methods to achieve better color separation between adjacent pixel electrodes. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays that improves the performance of such displays when they are deployed in low temperature environments and the displays are required to be updated when positioned vertically (i.e., the driving electric fields are substantially perpendicular to the direction of Earth's gravity). Methods are provided for displaying each of the colors at each pixel, as desired, with minimal interference (contamination) from the other particles.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: The present disclosure provides a carbon-encapsulated lithium manganese iron phosphate material having a composition of: LiFe1-x-yMnxMyPO4@C, where M includes at least one of Mg, V, Zr, Nb, In, Al, Co and Ni, 0.5?x?0.8, 0<y?0.02, and C is encapsulated carbon. The material has a secondary gradation structure with tightly bound material gradation, high compaction density, and excellent electrochemical performance. The present disclosure further provides a method for preparing a carbon-encapsulated lithium manganese iron phosphate material, which has a simple process flow and is suitable for application in large-scale industrial production. The present disclosure further provides a lithium ion battery in which the carbon-encapsulated lithium manganese iron phosphate material is applied.

Abstract: The present disclosure provides a semiconductor structure, including: a substrate structure; an epitaxial structure on the substrate structure, where the epitaxial structure includes at least one heterojunction structure sequentially stacked in a direction away from the substrate structure; each of the at least one heterojunction structure includes a channel layer and a barrier layer, the epitaxial structure includes a gate region, and in each of the at least one heterojunction structure, a part of the barrier layer corresponding to the gate region is removed to form a hole; a gate electrode on the gate region, where the gate electrode fills the hole, and surrounds the channel layer; and a source electrode and a drain electrode respectively at two sides of the gate electrode.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a silicon substrate having several through-silicon-vias therein; a first semiconductor layer located in each through-silicon-via and on the silicon substrate, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer, where a conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer, a material of the first semiconductor layer a group III nitride, a material of the active layer a group III nitride, and a material of the second semiconductor layer include a group III nitride.