Patents by Inventor Kai-Chih Wang
Kai-Chih Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11974228Abstract: An apparatus (e.g., an access point (AP) or a non-AP station (STA)) detects a non-primary subband of an operating bandwidth comprising a primary subband and the non-primary subband to be idle. The apparatus controls a transmit power in performing transmission on at least the non-primary subband.Type: GrantFiled: June 10, 2021Date of Patent: April 30, 2024Assignee: MediaTek Singapore Pte. Ltd.Inventors: Kai Ying Lu, Hung-Tao Hsieh, Yen-Shuo Lu, Chao-Chun Wang, James Chih-Shi Yee, Yongho Seok
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Publication number: 20240107414Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.Type: ApplicationFiled: September 23, 2022Publication date: March 28, 2024Inventors: Yu-Chieh HUANG, Kuhn-Chang LIN, Jen-Chun CHANG, Wen-Hsin HSIA, Chia-Jou LU, Sheng-Chih WANG, Chenghsin LIN, Yeong Leong CHOO, Chun-Hsiang CHIU, Chihhung HSIEH, Kai-Chun CHENG, Chung Wei LIN
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Patent number: 11937932Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.Type: GrantFiled: July 8, 2022Date of Patent: March 26, 2024Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITYInventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
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Patent number: 11940828Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.Type: GrantFiled: August 17, 2022Date of Patent: March 26, 2024Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Shao-Chang Huang, Yeh-Ning Jou, Ching-Ho Li, Kai-Chieh Hsu, Chun-Chih Chen, Chien-Wei Wang, Gong-Kai Lin, Li-Fan Chen
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Publication number: 20240073773Abstract: Various techniques and schemes pertaining to extremely-high throughput (EHT) multi-link maximum channel switching in wireless communications are described. A station (STA) multi-link device (MLD) receives an indication from a reporting access point (AP) affiliated with an AP MLD on one link of multiple links. The STA MLD determines a channel switching time when a reported AP switches from operating in a current channel of the reported AP to operating in a new channel on one other link of the multiple links based on the indication.Type: ApplicationFiled: August 16, 2023Publication date: February 29, 2024Inventors: Yongho Seok, Chao-Chun Wang, Kai Ying Lu, James Chih-Shi Yee, Gabor Bajko
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Patent number: 8361898Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure includes a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.Type: GrantFiled: January 28, 2010Date of Patent: January 29, 2013Assignee: VisEra Technologies Company LimitedInventors: Kai-Chih Wang, Fang-Chang Liu
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Patent number: 7833810Abstract: Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.Type: GrantFiled: June 29, 2009Date of Patent: November 16, 2010Assignee: VisEra Technologies Company LimitedInventors: Tzu-Han Lin, Tzy-Ying Lin, Fang-Chang Liu, Kai-Chih Wang
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Patent number: 7824964Abstract: A package structure for an optoelectronic device. The package structure comprises a device chip reversely disposed on a first substrate, which comprises a second substrate and a first dielectric layer between the first and second substrates. The first dielectric layer comprises a pad formed in a corner of the first dielectric layer non-overlapping the second substrate, such that the surface and sidewall of the pad are exposed. A metal layer is formed directly on the exposed surface of the pad and covers the second substrate. A protective layer covers the metal layer, having an opening to expose a portion of the metal layer on the second substrate. A solder ball is disposed in the opening, electrically connecting to the metal layer. The invention also discloses a method for fabricating the same.Type: GrantFiled: March 27, 2009Date of Patent: November 2, 2010Assignee: VisEra Technologies Company LimitedInventors: Kai-Chih Wang, Fang-Chang Liu
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Publication number: 20100127408Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure comprises a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.Type: ApplicationFiled: January 28, 2010Publication date: May 27, 2010Inventors: Kai-Chih WANG, Fang-Chang Liu
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Patent number: 7679187Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure comprises a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.Type: GrantFiled: January 11, 2007Date of Patent: March 16, 2010Assignee: VisEra Technologies Company LimitedInventors: Kai-Chih Wang, Fang-Chang Liu
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Publication number: 20090263927Abstract: Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.Type: ApplicationFiled: June 29, 2009Publication date: October 22, 2009Applicant: VISERA TECHNOLOGIES COMPANY LIMITEDInventors: Tzu-Han LIN, Tzy-Ying LIN, Fang-Chang LIU, Kai-Chih WANG
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Patent number: 7569409Abstract: Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.Type: GrantFiled: January 4, 2007Date of Patent: August 4, 2009Assignee: VisEra Technologies Company LimitedInventors: Tzu-Han Lin, Tzy-Ying Lin, Fang-Chang Liu, Kai-Chih Wang
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Patent number: 7566944Abstract: A package structure for an optoelectronic device. The package structure comprises a device chip reversely disposed on a first substrate, which comprises a second substrate and a first dielectric layer between the first and second substrates. The first dielectric layer comprises a pad formed in a corner of the first dielectric layer non-overlapping the second substrate, such that the surface and sidewall of the pad are exposed. A metal layer is formed directly on the exposed surface of the pad and covers the second substrate. A protective layer covers the metal layer, having an opening to expose a portion of the metal layer on the second substrate. A solder ball is disposed in the opening, electrically connecting to the metal layer. The invention also discloses a method for fabricating the same.Type: GrantFiled: January 11, 2007Date of Patent: July 28, 2009Assignee: VisEra Technologies Company LimitedInventors: Kai-Chih Wang, Fang-Chang Liu
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Publication number: 20090186449Abstract: A package structure for an optoelectronic device. The package structure comprises a device chip reversely disposed on a first substrate, which comprises a second substrate and a first dielectric layer between the first and second substrates. The first dielectric layer comprises a pad formed in a corner of the first dielectric layer non-overlapping the second substrate, such that the surface and sidewall of the pad are exposed. A metal layer is formed directly on the exposed surface of the pad and covers the second substrate. A protective layer covers the metal layer, having an opening to expose a portion of the metal layer on the second substrate. A solder ball is disposed in the opening, electrically connecting to the metal layer. The invention also discloses a method for fabricating the same.Type: ApplicationFiled: March 27, 2009Publication date: July 23, 2009Inventors: Kai-Chih WANG, Fang-Chang Liu
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Publication number: 20090026562Abstract: A package structure for an optoelectronic device. The package structure comprises a device chip interposed between a lower transparent substrate and an upper transparent substrate. The device chip comprises a semiconductor substrate comprising a device region surrounded by a pad region, in which the pad region comprises a plurality of notches along the edges of the semiconductor substrate. A dielectric layer is between the semiconductor substrate and the upper transparent substrate, comprising a plurality of pads formed therein and substantially aligned with the plurality of notches, respectively. A plurality of metal lines is disposed under a bottom surface of the lower transparent substrate. A plurality of solder balls disposed under the plurality of metal lines, respectively.Type: ApplicationFiled: July 26, 2007Publication date: January 29, 2009Inventors: Kai-Chih Wang, Fang-Chang Liu, I-Pang Chou
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Publication number: 20080169477Abstract: A package structure for an optoelectronic device. The package structure comprises a device chip reversely disposed on a first substrate, which comprises a second substrate and a first dielectric layer between the first and second substrates. The first dielectric layer comprises a pad formed in a corner of the first dielectric layer non-overlapping the second substrate, such that the surface and sidewall of the pad are exposed. A metal layer is formed directly on the exposed surface of the pad and covers the second substrate. A protective layer covers the metal layer, having an opening to expose a portion of the metal layer on the second substrate. A solder ball is disposed in the opening, electrically connecting to the metal layer. The invention also discloses a method for fabricating the same.Type: ApplicationFiled: January 11, 2007Publication date: July 17, 2008Inventors: Kai-Chih Wang, Fang-Chang Liu
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Publication number: 20080169117Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure comprises a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.Type: ApplicationFiled: January 11, 2007Publication date: July 17, 2008Inventors: Kai-Chih Wang, Fang-Chang Liu
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Publication number: 20080164553Abstract: Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.Type: ApplicationFiled: January 4, 2007Publication date: July 10, 2008Inventors: Tzu-Han Lin, Tzy-Ying Lin, Fang-Chang Liu, Kai-Chih Wang