Patents by Inventor Kai-Di Tzeng
Kai-Di Tzeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096999Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: Kai-Di Tzeng, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
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Patent number: 11855169Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.Type: GrantFiled: May 27, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kai-Di Tzeng, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
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Publication number: 20230369405Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
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Patent number: 11749719Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.Type: GrantFiled: July 7, 2022Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
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Publication number: 20230061857Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members, a second plurality of channel members, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a frontside source contact disposed between the first plurality of channel members and the second plurality of channel members as well as between the first gate structure and the second gate structure.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: Jui-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
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Publication number: 20220344472Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.Type: ApplicationFiled: July 7, 2022Publication date: October 27, 2022Inventors: Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
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Publication number: 20220293761Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.Type: ApplicationFiled: May 27, 2022Publication date: September 15, 2022Inventors: Kai-Di Tzeng, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
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Patent number: 11398553Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.Type: GrantFiled: November 20, 2020Date of Patent: July 26, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
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Patent number: 11349005Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.Type: GrantFiled: May 22, 2020Date of Patent: May 31, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Di Tzeng, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
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Publication number: 20220165848Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Inventors: Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
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Publication number: 20210367054Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.Type: ApplicationFiled: May 22, 2020Publication date: November 25, 2021Inventors: Kai-Di Tzeng, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang