Abstract: Disclosed are an image display method and a 3d display system. The method is adapted to the 3d display system including a 3d display device and includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3d image format. Whether the input image is a 3D format image complying with the 3D image format is determined through a stereo matching processing performed on the first image and the second image. An image interweaving process is enabled to be performed on the input image to generate an interweaving image in response to determining that the input image is the 3D format image complying with the 3D image format, and the interweaving image is displayed via the 3D display device.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A 3D format image detection method and an electronic apparatus using the same are provided. The 3D format image detection method includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3D image format. A 3D matching processing is performed on the first image and the second image to generate a disparity map of the first image and the second image. The matching number of a plurality of first pixels in the first image matched with a plurality of second pixels in the second image is calculated according to the disparity map. Whether the input image is a 3D format image conforming to the 3D image format is determined according to the matching number.

Abstract: A metal-clad laminate, a printed circuit board using the same and a method for manufacturing the metal-clad laminate. The metal-clad laminate comprises: a first dielectric layer, comprising a first dielectric material and not comprising a reinforcing fabric, the first dielectric material comprising 20 wt % to 60 wt % of a first fluoropolymer and 40 wt % to 80 wt % of a first filler; a second dielectric layer disposed on one side of the first dielectric layer and comprising a reinforcing fabric and a second dielectric material formed on the surface of the reinforcing fabric, wherein the thickness of the reinforcing fabric is not higher than 65 ?m and the second dielectric material comprises 55 wt % to 100 wt % of a second fluoropolymer and 0 to 45 wt % of a second filler; and a metal foil disposed on the other side of the second dielectric layer that is opposite to the first dielectric layer.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: A metal-clad laminate, a printed circuit board using the same and a method for manufacturing the metal-clad laminate. The metal-clad laminate comprises: a first dielectric layer, comprising a first dielectric material and not comprising a reinforcing fabric, the first dielectric material comprising 20 wt % to 60 wt % of a first fluoropolymer and 40 wt % to 80 wt % of a first filler; a second dielectric layer disposed on one side of the first dielectric layer and comprising a reinforcing fabric and a second dielectric material formed on the surface of the reinforcing fabric, wherein the thickness of the reinforcing fabric is not higher than 65 ?m and the second dielectric material comprises 55 wt % to 100 wt % of a second fluoropolymer and 0 to 45 wt % of a second filler; and a metal foil disposed on the other side of the second dielectric layer that is opposite to the first dielectric layer.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: A method for identifying siding includes receiving particular texture data associated with a physical texture of a particular siding sample, accessing a reference database including reference texture data associated with physical texture of multiple different reference siding samples, performing an automated texture data analysis by analyzing the particular texture data associated with the particular siding sample and the reference texture data associated with different reference siding samples, and automatically identifying at least one reference siding sample that matches the particular siding sample based at least on the automated texture data analysis. The particular texture data associated with the physical texture of the particular siding sample may comprise a digital image, such as a photographic or scanned image of the particular siding sample, or a photographic or scanned image of an ink image physically transferred from the particular siding sample onto a substrate.

Abstract: A method for identifying siding includes receiving particular texture data associated with a physical texture of a particular siding sample, accessing a reference database including reference texture data associated with physical texture of multiple different reference siding samples, performing an automated texture data analysis by analyzing the particular texture data associated with the particular siding sample and the reference texture data associated with different reference siding samples, and automatically identifying at least one reference siding sample that matches the particular siding sample based at least on the automated texture data analysis. The particular texture data associated with the physical texture of the particular siding sample may comprise a digital image, such as a photographic or scanned image of the particular siding sample, or a photographic or scanned image of an ink image physically transferred from the particular siding sample onto a substrate.

Abstract: This disclosure provides an electronic device and a method for displaying an event used for presenting a first type of event and a second type of event to a user. The method includes the following steps. A time interval inputted by the user is received. A record of the first type of event and a record of the second type of event are searched according to the time interval to determine whether there are the first type of event and the second type of event taking place in the time interval. A first related information of the first type of event and a second related information of the second type of event taking place in the time interval are displayed. Displaying locations of the first related information and the second related information indicate time when the first type of event and the second type of event take place, respectively.