Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an interconnection structure over the semiconductor substrate. The semiconductor device structure also includes a first conductive pillar over the interconnection structure. The first conductive pillar has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive pillar. The semiconductor device structure further includes a second conductive pillar over the interconnection structure. The second conductive pillar has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive pillar. The first conductive pillar is closer to a center point of the semiconductor substrate than the second conductive pillar. A bottom of the second protruding portion is wider than a bottom of the first protruding portion.

Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: An optical detection apparatus includes a substrate, a light source, a light sensor, a light-guiding structure. The substrate has a top surface. The light source on the top surface is configured to generate detection light toward an object over the light source. The light sensor is located on the top surface. The light-guiding structure is above the top surface and at least partially above the light source. A central axis of the light-guiding structure is vertical to the top surface, and the light source and the light sensor are at opposite sides relative to the central axis. The light-guiding structure is configured to deflect the detection light from one of the opposite sides at which the light source is located to another one of the opposite side at which the light sensor is located, such that the detection light reflected by the object moves toward the light sensor.

Abstract: The present disclosure provides a compound shown as formula (I), formula (II), which is used to prepare a radiocontrast tracer that can target binding to Tau protein.

Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: An optical detection apparatus includes a substrate, a light source, a light sensor, a light-guiding structure. The substrate has a top surface. The light source on the top surface is configured to generate detection light toward an object over the light source. The light sensor is located on the top surface. The light-guiding structure is above the top surface and at least partially above the light source. A central axis of the light-guiding structure is vertical to the top surface, and the light source and the light sensor are at opposite sides relative to the central axis. The light-guiding structure is configured to deflect the detection light from one of the opposite sides at which the light source is located to another one of the opposite side at which the light sensor is located, such that the detection light reflected by the object moves toward the light sensor.

Abstract: The present invention discloses a series of nuclear medicine tracers that are combined with brain microtubule-associated protein Tau targeting compounds to produce a group of compounds of nuclear medicine that can be utilized for imaging of microtubule-associated protein Tau. When the positrons released by the decay encounter the electrons of the cells in the sample, utilizing the positron decay characteristics of fluorine-18 or iodine-124 isotope to generate mutual destruction reactions, a pair of opposite gamma rays is formed which are imaged by positron emission tomography. The compounds can be applied for the in vivo detection of microtubule-associated protein Tau deposits in the brain. The invention provides a strategy for diagnosis of Alzheimer's disease and a method to measure the efficacy of therapeutic drugs targeting microtubule-associated protein Tau.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.

Abstract: A system and method for monitoring cardiovascular and brain functions in combination with a physiological detection device, which uses a smart wearable device to detect physiological data such as heart rate and pulse pressure of a user, and transmits the physiological data to an arithmetic function. An electronic device in which a preset function and a calculation formula are built in, and the physiological data can be converted into corresponding determination parameters to monitor the possibility and risk of cardiovascular diseases and neurodegenerative diseases.

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.

Abstract: A system and method for monitoring cardiovascular and brain functions in combination with a physiological detection device, which uses a smart wearable device to detect physiological data such as heart rate and pulse pressure of a user, and transmits the physiological data to an arithmetic function. An electronic device in which a preset function and a calculation formula are built in, and the physiological data can be converted into corresponding determination parameters to monitor the possibility and risk of cardiovascular diseases and neurodegenerative diseases.