Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an interconnection structure over the semiconductor substrate. The semiconductor device structure also includes a first conductive pillar over the interconnection structure. The first conductive pillar has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive pillar. The semiconductor device structure further includes a second conductive pillar over the interconnection structure. The second conductive pillar has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive pillar. The first conductive pillar is closer to a center point of the semiconductor substrate than the second conductive pillar. A bottom of the second protruding portion is wider than a bottom of the first protruding portion.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: An electronic module is provided. The electronic module includes a first transducer and a second transducer. The first transducer is configured to radiate a first ultrasonic wave. The second transducer is configured to radiate a second ultrasonic wave. The first transducer and the second transducer are disposed on noncoplanar surfaces.

Abstract: A color conversion panel and a display device are provided. The color conversion panel includes an opaque substrate and a sapphire substrate. The opaque substrate includes a plurality of first pixel openings, a plurality of second pixel openings and a plurality of third pixel openings. The first pixel openings are filled with red quantum dot material, and the second pixel openings are filled with green quantum dot material. The sapphire substrate is on the opaque substrate. A first surface of the sapphire substrate that faces the opaque substrate has a plurality of first arc surfaces corresponding to the first pixel openings, a plurality of second arc surfaces corresponding to the second pixel openings, and a plurality of third arc surfaces corresponding to the third pixel openings.

Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.

Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.

Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: The present disclosure provides a method for preparing a memory device. The method includes forming a doped region in a semiconductor substrate, and forming a word line across the doped region such that a first source/drain region and a second source/drain region are formed in the doped region and at opposite sides of the word line. The method also includes forming a bit line over and electrically connected to the first source/drain region, and forming a capacitor over and electrically connected to the second source/drain region. The formation of the capacitor includes forming a bottom electrode, forming a capacitor dielectric structure over the bottom electrode, and forming a top electrode over the capacitor dielectric structure.

Abstract: A method of forming a capacitor structure includes following operations. A first electrode is formed. A hafnium-zirconium oxide (HZO) layer is formed over the first electrode under a first temperature. An interface dielectric layer is formed over the HZO layer under a second temperature greater than the first temperature. A second electrode is formed over the interface dielectric layer. The HZO layer and the interface dielectric layer are annealed.

Abstract: A memory device includes a semiconductor substrate having an active region, and a word line extending across the active region. The memory device also includes a first source/drain region and a second source/drain region disposed in the active region and at opposite sides of the word line, a bit line disposed over and electrically connected to the first source/drain region, and a capacitor disposed over and electrically connected to the second source/drain region. The capacitor includes a bottom electrode, a top electrode, and a capacitor dielectric structure disposed between them. The capacitor dielectric structure includes a first metal oxide layer, a second metal oxide layer disposed over the first metal oxide layer, and a third metal oxide layer disposed over the second metal oxide layer. The first, the second and the third metal oxide layer include materials that are different from each other.

Abstract: The present application provides a storage capacitor with multiple dielectrics. The storage capacitor includes a lower electrode, an upper electrode, a first dielectric layer, a second dielectric layer and a third dielectric layer. The first dielectric layer covers the lower electrode, the second dielectric layer is disposed on the first dielectric layer, and the third dielectric layer is disposed on the second dielectric layer. The upper electrode is disposed on the third dielectric layer.

Abstract: The present application provides a method of fabricating a storage capacitor. The method includes steps of forming a lower electrode; depositing a first dielectric layer covering the lower electrode; depositing a second dielectric layer on the first dielectric layer; depositing a third dielectric layer on the second dielectric layer; and forming an upper electrode on the third dielectric layer.

Abstract: A method of forming a capacitor structure includes following operations. A first electrode is formed. A hafnium-zirconium oxide (HZO) layer is formed over the first electrode under a first temperature. An interface dielectric layer is formed over the HZO layer under a second temperature greater than the first temperature. A second electrode is formed over the interface dielectric layer. The HZO layer and the interface dielectric layer are annealed.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: depositing a first semiconductor layer on an inner surface of a trench of a substrate; depositing a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate, in which a dopant concentration of the first semiconductor layer is less than a dopant concentration of the second semiconductor layer; and depositing a third semiconductor layer on the second semiconductor layer to fill the trench of the substrate, in which a dopant concentration of the third semiconductor layer is less than the dopant concentration of the second semiconductor layer.

Abstract: A method of forming a capacitor structure includes following operations. A first electrode is formed. A hafnium-zirconium oxide (HZO) layer is formed over the first electrode under a first temperature. An interface dielectric layer is formed over the HZO layer under a second temperature greater than the first temperature. A second electrode is formed over the interface dielectric layer. The HZO layer and the interface dielectric layer are annealed.

Abstract: An identification method of an integrated circuit chip of the present invention includes identifying a surface structure or an internal structure of an integrated circuit chip, generating a structural information set according to the surface structure or internal structure, converting the structural information set into an identification information set. The identification information set generated by the above-mentioned identification method can be stored in a digital file, and a chip manufacturer requires no visible information printed on an outer surface of the integrated circuit chip such that factory information of the integrated circuit chip can be concealed.

Abstract: An energy saving air conditioning system is disclosed which provides different air conditioning modes, including a closed-loop mode, an open-loop mode, and a partial-loop mode, for controlling the environment in a high-density apparatus room. The energy saving air conditioning system uses a cloud operating center to monitor the temperature and the moisture inside and outside the high-density apparatus room. The cloud operating system dynamically selects the air conditioning mode in such a manner that energy can be saved and the environment in the high-density apparatus room can be optimally managed.

Abstract: An energy saving air conditioning system is disclosed which provides different air conditioning modes, including a closed-loop mode, an open-loop mode, and a partial-loop mode, for controlling the environment in a high-density apparatus room. The energy saving air conditioning system uses a cloud operating center to monitor the temperature and the moisture inside and outside the high-density apparatus room. The cloud operating system dynamically selects the air conditioning mode in such a manner that energy can be saved and the environment in the high-density apparatus room can be optimally to managed.

Abstract: A cooling apparatus for server rack is disclosed, which is disposed above at least one server rack. The cooling apparatus for server rack includes a fan module disposed at a back end above the least one server rack, a heat exchanger module disposed at a front end above the least one server rack, and an air guide connecting the fan module and the heat exchanger module. A hot air exhausted from the back end of the least one server rack is extracted by the fan module and is sent to the heat exchanger module through the air guide, and the hot air is cooled by the heat exchanger module, and a cool air is exhausted from the front end of the least one server rack.