Patents by Inventor Kai Tern Sih

Kai Tern Sih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for pFET fabrication using APM solutions
    Patent number: 8658543
    Abstract: A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing an integrated circuit comprising a p-type field effect transistor (pFET), recessing a surface region of the pFET using an ammonia-hydrogen peroxide-water (APM) solution to form a recessed pFET surface region, and depositing a silicon-based material channel on the recessed pFET surface region.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: February 25, 2014
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Joanna Wasyluk, Stephan Kronholz, Yew-Tuck Chow, Richard J. Carter, Berthold Reimer, Kai Tern Sih
  • METHODS FOR PFET FABRICATION USING APM SOLUTIONS
    Publication number: 20130203244
    Abstract: A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing an integrated circuit comprising a p-type field effect transistor (pFET), recessing a surface region of the pFET using an ammonia-hydrogen peroxide-water (APM) solution to form a recessed pFET surface region, and depositing a silicon-based material channel on the recessed pFET surface region.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 8, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Joanna Wasyluk, Stephan Kronholz, Yew-Tuck Chow, Richard J. Carter, Berthold Reimer, Kai Tern Sih