Abstract: An imaging device according to an embodiment of the present disclosure includes: a first semiconductor layer including, for each pixel, a photoelectric conversion section and a charge accumulation section that accumulates signal charge generated in the photoelectric conversion section; a second semiconductor layer stacked on the first semiconductor layer and having a first surface provided with a pixel transistor, in which the pixel transistor has a three-dimensional structure and reads the signal charge from the charge accumulation section; and a through-wiring line that directly couples the charge accumulation section and a gate electrode of the pixel transistor to each other.