Abstract: A signal detection method associated with a constellation diagram corresponding to a modulation scheme is provided for enhancing the reliability of code rate search. A mask is provided between two adjacent constellation points in the modulation scheme. The signal detection method includes: receiving a plurality of signals, and mapping the plurality of signals to the constellation diagram; when a first signal among the plurality of signals is located in the mask, discarding the first signal; and when a second signal among the plurality of signals outside located in the mask, determining a constellation point corresponding to the second signal.

Abstract: A semiconductor device including a conductive element and an interface surface fabricated atop the conductive element, and a method for fabricating such a device are described. An exemplary device includes a substrate having a conductive element and a metal layer fabricated atop the conductive element. An oxide layer is fabricated atop the metal layer, thus forming an interface surface. During polishing (e.g., planarization), in which an upper portion of the interface surface is removed, the presence of the interface surface greatly reduces the loading on the conductive element. A second substrate fabricated using the same process may be stacked atop the first substrate and bonded using a hybrid bonding process.

Abstract: An echo cancellation circuit includes: a delay module, receiving an input signal and delaying the input signal to generate a plurality of delayed signals; a multiplication module, multiplying the plurality of delayed signals by a plurality of coefficients to generate a plurality of multiplication results, respectively; a summing circuit, performing a summation on the plurality of multiplication results to generate a summation signal; a subtraction circuit, receiving a first delay signal and generating a subtracted signal according to the first delayed signal and the summation signal; and a coefficient calculating circuit, calculating the plurality of coefficients according to the subtracted signal. The echo cancellation circuit outputs an output signal as the subtracted signal.

Abstract: A signal detection method associated with a constellation diagram corresponding to a modulation scheme is provided for enhancing the reliability of code rate search. A mask is provided between two adjacent constellation points in the modulation scheme. The signal detection method includes: receiving a plurality of signals, and mapping the plurality of signals to the constellation diagram; when a first signal among the plurality of signals is located in the mask, discarding the first signal; and when a second signal among the plurality of signals outside located in the mask, determining a constellation point corresponding to the second signal.

Abstract: A variable linked braking system controlled by motorcycle lean angle includes a brake master cylinder; a hydraulic pressure proportion variable valve connected to the brake master cylinder; a front brake unit and a rear brake unit, both connected to the hydraulic pressure proportion variable valve; a hydraulic pressure proportion controller for controlling the hydraulic pressure proportion variable valve; a motorcycle lean angle sensor for sensing a motorcycle lean angle and sending a signal thereof to the hydraulic pressure proportion controller; and a brake switch for starting the brake master cylinder and sending a brake signal to the hydraulic pressure proportion controller for controlling the hydraulic pressure proportion variable valve so that the braking force ratio of the front brake unit to the rear brake unit decreases as the motorcycle lean angle increases, thereby enhancing the stability and traction of a motorcycle being braked in a turn.

Abstract: A variable linked braking system controlled by motorcycle speed includes a brake master cylinder; a hydraulic pressure proportion variable valve connected to the brake master cylinder by an oil path; front and rear brake units connected to the hydraulic pressure proportion variable valve by first and second oil paths, respectively; a hydraulic pressure proportion controller for controlling the hydraulic pressure proportion variable valve; a motorcycle speed sensor for converting a sensed motorcycle speed into a speed signal and sending the speed signal to the hydraulic pressure proportion controller; and a brake switch for starting the brake master cylinder and sending a brake signal to the hydraulic pressure proportion controller for controlling the hydraulic pressure distribution proportion of the hydraulic pressure proportion variable valve so that the ratio of braking force of the front brake unit to braking force of the rear brake unit increases with the motorcycle speed.

Abstract: A method includes providing a semiconductor device disposed on a substrate, wherein the semiconductor device includes a semiconductor device feature, forming a conductive layer over the substrate such that the conductive layer is electrically coupled to the semiconductor device feature, forming a getter layer over the conductive layer, wherein the getter layer includes a first layer that is formed of titanium and a second layer overlying the first layer that is formed of tantalum nitride, and forming an interconnect layer over the getter layer such that the interconnect layer is electrically coupled to the semiconductor device feature.

Abstract: An equalization enhancing module includes: a multiplication unit, multiplying a plurality of equalized signals by a scaling coefficient to obtain a plurality of scaled signals; a determination unit, coupled to the multiplication unit, determining whether the plurality of scaled signals are located in a predetermined region to generate a plurality of determination results; a ratio calculating unit, coupled to the determination unit, calculating an inner ratio associated with a ratio of the plurality of scaled signals located in the predetermined region; and a coefficient calculating unit, coupled to the ratio calculating unit, calculating the scaling coefficient according to the inner ratio.

Abstract: A semiconductor structure includes a first magnetic layer, an insulative oxide layer, an oxygen trapping layer and a cap layer. The insulative oxide layer is over the first magnetic layer. The oxygen trapping layer is over the insulative oxide layer. The oxygen concentration of the oxygen trapping layer is less than an oxygen concentration of the insulative oxide layer. The cap layer is over the oxygen trapping layer.

Abstract: A semiconductor structure includes a first magnetic layer, an insulative oxide layer, an oxygen trapping layer and a cap layer. The insulative oxide layer is over the first magnetic layer. The oxygen trapping layer is over the insulative oxide layer. The oxygen concentration of the oxygen trapping layer is less than an oxygen concentration of the insulative oxide layer. The cap layer is over the oxygen trapping layer.

Abstract: An embodiment of a memory device is disclosed. The memory device includes a multi-stack dielectric layer over a substrate; a first conductive layer over the multi-stack dielectric layer; a second conductive layer over the first conductive layer; a getter layer over the second conductive layer, wherein the getter layer includes a first layer that is formed of titanium and a second layer overlying the first layer that is formed of tantalum nitride; and an interconnect layer over the getter layer such that the interconnect layer is electrically coupled to the first conductive layer.

Abstract: The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell having a reduced leakage current, and an associated apparatus. In some embodiments, the method is performed by forming a bottom electrode layer over a lower metal interconnect layer. A dielectric data storage layer having a variable resistance is formed onto the bottom electrode layer in-situ with forming at least a part of the bottom electrode layer. A top electrode layer is formed over the dielectric data storage layer. By forming the dielectric data storage layer in-situ with forming at least a part of the bottom electrode layer, leakage current, leakage current distribution and device yield of the RRAM cell are improved.

Abstract: The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell having a reduced leakage current, and an associated apparatus. In some embodiments, the method is performed by forming a bottom electrode over a lower metal interconnect layer using an atomic layer deposition (ALD) process to form at least a top portion of the bottom electrode. A dielectric data storage layer is formed onto the top portion of the bottom electrode in-situ with forming the top portion of the bottom electrode. A top electrode is formed over the dielectric data storage layer, and an upper metal interconnect layer is formed over the top electrode. By forming the top portion of the bottom electrode using an ALD process that is in-situ with the formation of the overlying dielectric data storage layer, leakage current, leakage current distribution and device yield of the RRAM cell are improved.

Abstract: The present invention discloses a piezoelectric loudspeaker. The piezoelectric loudspeaker comprises a sound producing plate, a resonant sound-box, a surround and a reflective sound-box. The sound producing plate comprises a piezoelectric ceramic element. The resonant sound-box includes a first opening comprising a first carrying part. The sound producing plate is disposed on the first carrying part. A cavity resonator is formed between the sound producing plate and the resonant sound-box. The surround is disposed between the first carrying part and the sound producing plate. The reflective sound-box includes a second opening and a reflective output opening. The second opening comprises a second carrying part. The resonant sound-box is disposed on the second carrying part. A reflective cavity body is formed between the resonant sound-box and the reflective sound-box, and the reflective cavity body is connected the reflective output opening.

Abstract: The present disclosure relates to an integrated chip having a titanium nitride film that provides for a reduced leakage path, and an associated method of formation. In some embodiments, the integrated chip comprises a semiconductor substrate. A titanium nitride film is disposed over the semiconductor substrate. The titanium nitride film comprises a plurality of titanium nitride layers having grain boundaries abutting vertical column-like structures of titanium nitride. The grain boundaries are discontinuous between a top surface of the titanium nitride film and a bottom surface of the titanium nitride film. The discontinuity of the grain boundaries between the different titanium nitride layers reduces leakage paths through the titanium nitride film (e.g., and thereby can improve operation of a MIM capacitor having titanium nitride electrodes).

Abstract: Methods and apparatuses for a magnetic tunnel junction (MTJ) which can be used in as a magnetic random access memory cell are disclosed. The MTJ comprises a free layer and an insulator layer. The MTJ further comprises a pinned layer with a first region, a second region, and a third region. The second region is of a first length and of a first thickness, and the first region and the third region are of a second length and of a second thickness. A ratio of the first thickness to the second thickness may be larger than 1.2. A ratio of the second length to the first length is larger than 0.5. The first thickness may be larger than a spin diffusion length of a material for the pinned layer. So formed MTJ results in increased tunneling magnetic resistance ratio and reduced critical switch current of the MTJ.

Abstract: The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a tunneling layer disposed over the pinned layer, a free layer disposed over the tunneling layer and a capping layer disposed over the free layer. The capping layer includes metal-oxide and metal-nitride materials.

Abstract: A signal processing apparatus for receiving a spectral line of an original signal includes a starting point determining module, a searching module and a symbol rate determining module. The starting point determining module finds a maximum energy in the spectral line and determines at least one search starting point according to the maximum energy. From the at least one search starting point, the searching module searches along the spectral line towards a region with a lower energy for at least one minimum energy satisfying a predetermined condition. The symbol rate determining module determines a symbol rate of the original signal according to the at least one minimum energy.

Abstract: A detection circuit is provided. A detection signal corresponding to an equivalent capacitance value of a micro-electro-mechanical system is generated by an oscillator, and the equivalent capacitance value of the micro-electro-mechanical system varies with a location of the micro-electro-mechanical system.

Abstract: The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a tunneling layer disposed over the pinned layer, a free layer disposed over the tunneling layer and a capping layer disposed over the free layer. The capping layer includes metal-oxide and metal-nitride materials.