Patents by Inventor Kai Yoshitsugu
Kai Yoshitsugu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9653502Abstract: There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.Type: GrantFiled: April 7, 2014Date of Patent: May 16, 2017Assignee: Sony CorporationInventor: Kai Yoshitsugu
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Publication number: 20140218574Abstract: There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.Type: ApplicationFiled: April 7, 2014Publication date: August 7, 2014Applicant: Sony CorporationInventor: Kai Yoshitsugu
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Patent number: 8729450Abstract: There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.Type: GrantFiled: February 22, 2012Date of Patent: May 20, 2014Assignee: Sony CorporationInventor: Kai Yoshitsugu
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Publication number: 20120228473Abstract: There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.Type: ApplicationFiled: February 22, 2012Publication date: September 13, 2012Applicant: SONY CORPORATIONInventor: Kai Yoshitsugu
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Patent number: 8097486Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: GrantFiled: February 19, 2010Date of Patent: January 17, 2012Assignee: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Patent number: 8093635Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: GrantFiled: March 24, 2008Date of Patent: January 10, 2012Assignee: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20100167450Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: ApplicationFiled: February 19, 2010Publication date: July 1, 2010Applicant: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Patent number: 7648917Abstract: A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insulating film to selective etching, and forming sidewalls on the sides of the gate electrode; subjecting the gate electrode having the sidewalls formed to ion implantation; covering the gate electrode having the sidewalls formed and forming a third insulating film on the silicon substrate; covering with a mask material part of the gate electrodes covered with the third insulating film, and subjecting the substrate to etching to remove exposed third insulating film; and, after removing the mask material, forming a metal film capable of forming a silicide on the silicon substrate such that the metal film covers the gate electrodes and the third insulating film to form a silicide layer.Type: GrantFiled: September 19, 2007Date of Patent: January 19, 2010Assignee: Sony CorporationInventors: Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20080237666Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: ApplicationFiled: March 24, 2008Publication date: October 2, 2008Applicant: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20080081394Abstract: A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insulating film to selective etching, and forming sidewalls on the sides of the gate electrode; subjecting the gate electrode having the sidewalls formed to ion implantation; covering the gate electrode having the sidewalls formed and forming a third insulating film on the silicon substrate; covering with a mask material part of the gate electrodes covered with the third insulating film, and subjecting the substrate to etching to remove exposed third insulating film; and, after removing the mask material, forming a metal film capable of forming a silicide on the silicon substrate such that the metal film covers the gate electrodes and the third insulating film to form a silicide layer.Type: ApplicationFiled: September 19, 2007Publication date: April 3, 2008Applicant: SONY CORPORATIONInventors: Kai Yoshitsugu, Kenichi Chiba