Abstract: Disclosed are an apparatus and a method for forming a gas-liquid mixture having a stable vapor concentration. The apparatus comprises a mixing unit (1), a guide unit (2) and an evaporation chamber (3). In the mixing unit (1), a liquid stream is directly injected into a gas stream to form a mixture. The mixture is guided into the evaporation chamber (3) through the guide unit (2). The liquid is able to be spread over the rough inner surface of the evaporation chamber (3) so as to form a gas-liquid mixture having a stable vapor concentration. The technique can be applied to adsorption measurements using ellipsometry, as well as other research and products requiring use of stable and very-low-speed fluids.

Abstract: A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.

Abstract: A gas injection device, wherein comprising: a gas channel including an air inlet provided at a upper portion therein and a gas outlet provided at a lower portion therein; and a light channel including an incident light channel and a reflected light channel provided at each side of the gas channel separately, wherein gases arrives at a surface of a sample to be tested via said gas channel and flows out from a slit between said light channel, the gas outlet of gas channel, and the surface of the sample to be tested, and gases flow in a manner of laminar flow with the Peclet number of an air flow being larger than 1. The gas injection device can effectively prevent air from returning back to the measurement system.

Abstract: Disclosed is a wafer processing apparatus and method. The wafer processing apparatus comprises a chamber, which is a sealed structure having an openable baffle, and is internally provided with an immersion tank having a waste liquid discharge port; a vacuum system for adjusting and maintaining a pressure inside the chamber; a gas supply system comprising an inert gas supply unit and an organic solvent vapor supply unit respectively supplying an inert gas and an organic solvent vapor to the chamber; a temperature control system for adjusting the temperature inside the chamber. According to the present invention, the problems present in existing wafer drying modes can be solved, and in particular, the present invention is well adaptable to a trend of integrated circuit devices developed from a two-dimensional planar structure to a three-dimensional structure in morphology and having more and more increased density.

Abstract: According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a first region and a second region, the method comprising: providing a first implantation mask covering the first region of the semiconductor structure, the first implantation mask including a first sacrificial layer, wherein the first sacrificial layer is formed as a spin-on-carbon (SOC) layer, and a second sacrificial layer, wherein the second sacrificial layer is formed as a spin-on-glass (SOG) layer; subjecting the semiconductor structure to an ion implantation process wherein an extension of the first implantation mask is such that ion implantation in the first region is counteracted and ion implantation in the second region is allowed wherein the second region is implanted; forming a third sacrificial layer covering the second region of the semiconductor structure, wherein the third sacrificial layer includes carbon; removing the second sacrificial la

Abstract: According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a first region and a second region, the method comprising: providing a first implantation mask covering the first region of the semiconductor structure, the first implantation mask including a first sacrificial layer, wherein the first sacrificial layer is formed as a spin-on-carbon (SOC) layer, and a second sacrificial layer, wherein the second sacrificial layer is formed as a spin-on-glass (SOG) layer; subjecting the semiconductor structure to an ion implantation process wherein an extension of the first implantation mask is such that ion implantation in the first region is counteracted and ion implantation in the second region is allowed wherein the second region is implanted; forming a third sacrificial layer covering the second region of the semiconductor structure, wherein the third sacrificial layer includes carbon; removing the second sacrificial la

Abstract: A method for treating semiconductor wafer includes: providing a stack including a high-k layer including a first oxide material, wherein the first oxide material contains hafnium and/or zirconium, and a cap-layer including a second oxide material, wherein the cap-layer has been deposited on top of the high-k layer, wherein the second oxide material contains lanthanum, a lanthanide and/or aluminium; supplying liquid A to the surface of the semiconductor wafer, liquid A being an aqueous solution containing an oxidizing agent; supplying liquid B to the surface of the semiconductor wafer, liquid B being a liquid with a pH-value lower than 6; and conducting a step SC wherein a liquid C is supplied to the surface of the semiconductor wafer, wherein step SC is carried out after step SB, wherein liquid C is an aqueous acidic solution with a fluorine concentration of at least 10 ppm.