Patents by Inventor Kam-Yan Hon
Kam-Yan Hon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240038920Abstract: A photodetector includes a substrate, a first optical absorber, and a second optical absorber. The first optical absorber is disposed in the substrate along a direction of propagation of an optical signal through the substrate. The first optical absorber is offset in the substrate according to an offset of the optical signal in a direction orthogonal to the direction of propagation. The second optical absorber is disposed in the substrate along the direction of propagation of the optical signal. The second optical absorber is offset in the substrate according to the offset of the optical signal in the direction orthogonal to the direction of propagation.Type: ApplicationFiled: July 29, 2022Publication date: February 1, 2024Inventors: Fatemeh REZAEIFAR BAYAT, Kam Yan HON, Attila MEKIS, Gianlorenzo MASINI
-
Publication number: 20240038919Abstract: A photodetector includes a substrate, an optical absorber, a first doped region, a second doped region, and a third doped region. The optical absorber is disposed in the substrate and includes a first region and a second region. The first doped region is disposed in the substrate such that the first doped region contacts the second region of the optical absorber. The second doped region is disposed in the substrate such that the second doped region contacts the second region of the optical absorber. The second region of the optical absorber is positioned between the first doped region and the second doped region. The third doped region is disposed in the substrate and has an opposite doping relative to the first doped region and the second doped region. The first region of the optical absorber is positioned between the third doped region and the second region of the optical absorber.Type: ApplicationFiled: July 26, 2022Publication date: February 1, 2024Inventors: Gianlorenzo MASINI, Kam Yan HON, Fatemeh REZAEIFAR BAYAT
-
Patent number: 11735574Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.Type: GrantFiled: June 16, 2021Date of Patent: August 22, 2023Assignee: Cisco Technology, Inc.Inventors: Kam-Yan Hon, Subal Sahni, Gianlorenzo Masini, Attila Mekis
-
Patent number: 11217710Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.Type: GrantFiled: January 28, 2020Date of Patent: January 4, 2022Assignee: Luxtera LLCInventors: Kam-Yan Hon, Gianlorenzo Masini, Subal Sahni
-
Publication number: 20210356775Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Inventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini
-
Publication number: 20210313306Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.Type: ApplicationFiled: June 16, 2021Publication date: October 7, 2021Inventors: Kam-Yan HON, Subal SAHNI, Gianlorenzo MASINI, Attila MEKIS
-
Patent number: 11106061Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.Type: GrantFiled: April 6, 2020Date of Patent: August 31, 2021Assignee: Luxtera LLCInventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini
-
Patent number: 11101400Abstract: Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.Type: GrantFiled: November 8, 2018Date of Patent: August 24, 2021Assignee: Luxtera LLCInventors: Gianlorenzo Masini, Kam-Yan Hon, Subal Sahni, Attila Mekis
-
Patent number: 11073737Abstract: Methods and systems for an all-optical wafer acceptance test may include an optical transceiver on a chip, the optical transceiver comprising first, second, and third grating couplers, an interferometer comprising first and second phase modulators, a splitter, and a plurality of photodiodes. A first input optical signal may be received in the chip via the first grating coupler, where the first input optical signal may be coupled to the interferometer. An output optical signal may be coupled out of the chip via the second grating coupler for a first measurement of the interferometer. A second input optical signal may be coupled to a third grating coupler and a portion of the second input optical signal may be communicated to each of the plurality of photodiodes via the splitter. A voltage may be generated using the photodiodes based on the second input signal that may bias the first phase modulator.Type: GrantFiled: December 30, 2019Date of Patent: July 27, 2021Assignee: Luxtera LLCInventors: Gianlorenzo Masini, Roman Bruck, Kam-Yan Hon, Attila Mekis
-
Patent number: 11049851Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.Type: GrantFiled: June 6, 2018Date of Patent: June 29, 2021Assignee: Luxtera LLCInventors: Kam-Yan Hon, Subal Sahni, Gianlorenzo Masini, Attila Mekis
-
Patent number: 10855378Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.Type: GrantFiled: July 22, 2019Date of Patent: December 1, 2020Assignee: Luxtera LLCInventors: Subal Sahni, Kam-Yan Hon, Attila Mekis, Gianlorenzo Masini, Lieven Verslegers
-
Publication number: 20200292855Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.Type: ApplicationFiled: April 6, 2020Publication date: September 17, 2020Inventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini
-
Publication number: 20200209704Abstract: Methods and systems for an all-optical wafer acceptance test may include an optical transceiver on a chip, the optical transceiver comprising first, second, and third grating couplers, an interferometer comprising first and second phase modulators, a splitter, and a plurality of photodiodes. A first input optical signal may be received in the chip via the first grating coupler, where the first input optical signal may be coupled to the interferometer. An output optical signal may be coupled out of the chip via the second grating coupler for a first measurement of the interferometer. A second input optical signal may be coupled to a third grating coupler and a portion of the second input optical signal may be communicated to each of the plurality of photodiodes via the splitter. A voltage may be generated using the photodiodes based on the second input signal that may bias the first phase modulator.Type: ApplicationFiled: December 30, 2019Publication date: July 2, 2020Inventors: Gianlorenzo Masini, Roman Bruck, Kam-Yan Hon, Attila Mekis
-
Publication number: 20200161482Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.Type: ApplicationFiled: January 28, 2020Publication date: May 21, 2020Inventors: Kam-Yan Hon, Gianlorenzo Masini, Subal Sahni
-
Publication number: 20200162166Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.Type: ApplicationFiled: July 22, 2019Publication date: May 21, 2020Inventors: Subal Sahni, Kam-Yan Hon, Attila Mekis, Gianlorenzo Masini, Lieven Verslegers
-
Patent number: 10613358Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.Type: GrantFiled: August 7, 2018Date of Patent: April 7, 2020Assignee: Luxtera, Inc.Inventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini
-
Patent number: 10546963Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.Type: GrantFiled: October 29, 2015Date of Patent: January 28, 2020Assignee: Luxtera, Inc.Inventors: Kam-Yan Hon, Gianlorenzo Masini, Subal Sahni
-
Patent number: 10361790Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.Type: GrantFiled: July 16, 2018Date of Patent: July 23, 2019Assignee: LUXTERA, INC.Inventors: Subal Sahni, Kam-Yan Hon, Attila Mekis, Gianlorenzo Masini, Lieven Verslegers
-
Publication number: 20190165200Abstract: Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.Type: ApplicationFiled: November 8, 2018Publication date: May 30, 2019Inventors: Gianlorenzo Masini, Kam-Yan Hon, Subal Sahni, Attila Mekis
-
Publication number: 20190074907Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.Type: ApplicationFiled: July 16, 2018Publication date: March 7, 2019Inventors: Subal Sahni, Kam-Yan Hon, Attila Mekis, Gianlorenzo Masini, Lieven Verslegers