Patents by Inventor Kan Hwa Chang

Kan Hwa Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and apparatus for carbon ion source head
    Patent number: 9196452
    Abstract: Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: November 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Jiun Lee, Cheng-Hung Hu, Yh-Hsiu Hsiao, Kan Hwa Chang, Ming-Te Chen
  • Methods And Apparatus For Carbon Ion Source Head
    Publication number: 20140256122
    Abstract: Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 11, 2014
    Inventors: Yi-Jiun Lee, Cheng-Hung Hu, Yh-Hsiu Hsiao, Kan Hwa Chang, Ming-Te Chen