Abstract: A control system for providing a closed loop, real time control of a charged particle pencil beam is disclosed. The system includes a first detector apparatus, a second detector apparatus, a first orthogonal magnetic deflector apparatus, a second orthogonal magnetic deflector apparatus, and a controller. The controller compares the measured position and beam angle of the beam with a model position and beam angle of a model beam to determine an offset error and a beam angle error. The first orthogonal magnetic deflector apparatus includes a pair of electromagnets to correct a first component of the offset and beam angle errors. The second orthogonal magnetic deflector apparatus includes a pair of electromagnets to correct a second component of the offset and beam angle errors. The beam can be iteratively adjusted during patient therapy or short pauses in patient therapy.

Abstract: A control system for providing a closed loop, real time control of a charged particle pencil beam is disclosed. The system includes a first detector apparatus, a second detector apparatus, a first orthogonal magnetic deflector apparatus, a second orthogonal magnetic deflector apparatus, and a controller. The controller compares the measured position and beam angle of the beam with a model position and beam angle of a model beam to determine an offset error and a beam angle error. The first orthogonal magnetic deflector apparatus includes a pair of electromagnets to correct a first component of the offset and beam angle errors. The second orthogonal magnetic deflector apparatus includes a pair of electromagnets to correct a second component of the offset and beam angle errors. The beam can be iteratively adjusted during patient therapy or short pauses in patient therapy.

Abstract: An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck.

Abstract: A multi-resolution detector includes a high-resolution pixelated electrode and a low-resolution pixelated electrode. The high-resolution pixelated electrode includes a plurality of sub-arrays of first pixels. Each respective first pixel at each relative position in each sub-array is electrically connected in parallel with one another. The low-resolution pixelated electrode includes a plurality of second pixels. A control system receives as inputs an output from each pixelated detector. The control system uses the inputs to determine a physical position and a transverse intensity distribution of an incident charged particle pencil beam at the resolution of the high-resolution pixelated electrode.

Abstract: A multi-resolution detector includes a high-resolution pixelated electrode and a low-resolution pixelated electrode. The high-resolution pixelated electrode includes a plurality of sub-arrays of first pixels. Each respective first pixel at each relative position in each sub-array is electrically connected in parallel with one another. The low-resolution pixelated electrode includes a plurality of second pixels. A control system receives as inputs an output from each pixelated detector. The control system uses the inputs to determine a physical position and a transverse intensity distribution of an incident charged particle pencil beam at the resolution of the high-resolution pixelated electrode.

Abstract: A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.

Abstract: An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.

Abstract: A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.

Abstract: The present invention involves a system and method of remotely detecting the presence of a wafer comprising, a passive RFID circuit, wherein the RFID circuit is attached to an end of a transfer arm located inside a vacuum chamber of an ion implantation system, a reader located outside the vacuum chamber, and wherein the RFID tag provides an indication relating to whether or not a wafer is secured by the transfer arm.

Abstract: An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck.

Abstract: An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.

Abstract: The present invention involves a system and method of remotely detecting the presence of a wafer comprising, a passive RFID circuit, wherein the RFID circuit is attached to an end of a transfer arm located inside a vacuum chamber of an ion implantation system, a reader located outside the vacuum chamber, and wherein the RFID tag provides an indication relating to whether or not a wafer is secured by the transfer arm.

Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a first link and a second link rigidly coupled to one another at a first joint, wherein the first link and second link are rotatably coupled to a base portion by the first joint, therein defining a first axis. An end effector, whereon the substrate resides, is coupled to the first link. The second link is coupled to a first actuator via at least second joint. The first actuator is operable to translate the second joint with respect to the base portion, therein rotating the first and second links about the first axis and translating the substrate along a first scan path in an oscillatory manner. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Abstract: A work piece transfer apparatus for use with an ion beam implanter for treating a work piece at sub-atmospheric pressure. The work piece transfer apparatus includes an evacuable load lock system in fluid communication with an interior region the implantation chamber interior region. The load lock system includes a support surface for supporting the work piece with an opening aligned with the work piece. The work piece transfer apparatus further includes a work piece support within the implantation chamber having a pedestal supported by a linkage with two degrees of freedom. The linkage moves the pedestal transversely through the load lock support surface opening to pick up the work piece from the support surface prior to treatment. The pedestal holds the work piece in position in the implantation chamber for treatment. The linkage then moves the pedestal transversely through the load lock support surface opening to deposit the work piece on the support surface subsequent to treatment.

Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a first link and a second link rigidly coupled to one another at a first joint, wherein the first link and second link are rotatably coupled to a base portion by the first joint, therein defining a first axis. An end effector, whereon the substrate resides, is coupled to the first link. The second link is coupled to a first actuator via at least second joint. The first actuator is operable to translate the second joint with respect to the base portion, therein rotating the first and second links about the first axis and translating the substrate along a first scan path in an oscillatory manner. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Abstract: A work piece transfer apparatus for use with an ion beam implanter for treating a work piece at sub-atmospheric pressure. The work piece transfer apparatus includes an evacuable load lock system in fluid communication with an interior region the implantation chamber interior region. The load lock system includes a support surface for supporting the work piece with an opening aligned with the work piece. The work piece transfer apparatus further includes a work piece support within the implantation chamber having a pedestal supported by a linkage with two degrees of freedom. The linkage moves the pedestal transversely through the load lock support surface opening to pick up the work piece from the support surface prior to treatment. The pedestal holds the work piece in position in the implantation chamber for treatment. The linkage then moves the pedestal transversely through the load lock support surface opening to deposit the work piece on the support surface subsequent to treatment.