Abstract: A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

Abstract: A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

Abstract: A semiconductor device manufacturing method by which a process chamber can be self-cleaned, while keeping a temperature in the process chamber low or a semiconductor device manufacturing method by which a high-k film adhering in the process chamber can be effectively removed. The method is provided with a pre-coat process, a film forming process and a cleaning process. Activated F* or Cl* by remote plasma passes through a high-k film (31), reacts to a pre-coat film (30) composed of SiO2 or Si. Since the pre-coat film (30) peels in pieces, the high-k film over the pre-coat film can be removed together.

Abstract: According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor device includes a first thin film layer forming step A and a second thin film layer forming step B. In the first thin film layer forming step A, on the way of heating and raising the temperature of the substrate up to a film-forming temperature, a film-forming source supply in which an organic source gas is made adhere onto the substrate in yet unreacted state is performed (202), and thereafter, a RPO process (Remote Plasma Oxidation) in which an oxygen radical is supplied onto the substrate to form a first thin film layer is performed (203). In this first thin film layer forming step A, it is preferable to repeat the film-forming source supply onto the substrate and the RPO process more than once.

Abstract: It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature.

Abstract: It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature.

Abstract: According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor device includes a first thin film layer forming step A and a second thin film layer forming step B. In the first thin film layer forming step A, on the way of heating and raising the temperature of the substrate up to a film-forming temperature, a film-forming source supply in which an organic source gas is made adhere onto the substrate in yet unreacted state is performed (202), and thereafter, a RPO process (Remote Plasma Oxidation) in which an oxygen radical is supplied onto the substrate to form a first thin film layer is performed (203). In this first thin film layer forming step A, it is preferable to repeat the film-forming source supply onto the substrate and the RPO process more than once.