Patents by Inventor Kang Sub Yim
Kang Sub Yim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230142684Abstract: Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.Type: ApplicationFiled: December 21, 2021Publication date: May 11, 2023Applicant: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Sure K. Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
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Patent number: 11621162Abstract: Semiconductor processing methods are described for forming UV-treated, low-? dielectric films. The methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-carbon-containing precursor. The methods may further include generating a deposition plasma from the deposition precursors within the substrate processing region, and depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The as-deposited silicon-and-carbon-containing material may be characterized by greater than or about 5% hydrocarbon groups. The methods may still further include exposing the deposited silicon-and-carbon-containing material to ultraviolet light. The exposed silicon-and-carbon-containing material may be characterized by less than or about 2% hydrocarbon groups.Type: GrantFiled: October 5, 2020Date of Patent: April 4, 2023Assignee: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Sure Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
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Publication number: 20230094180Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Applicant: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 11600486Abstract: Embodiments of the semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (? value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.Type: GrantFiled: September 15, 2020Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Sure K. Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
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Patent number: 11594409Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: GrantFiled: June 16, 2020Date of Patent: February 28, 2023Assignee: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 11572622Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.Type: GrantFiled: September 14, 2020Date of Patent: February 7, 2023Assignee: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Kang Sub Yim, Yijun Liu, Li-Qun Xia, Sure K. Ngo
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Patent number: 11393678Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.Type: GrantFiled: August 10, 2020Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
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Publication number: 20220108884Abstract: Semiconductor processing methods are described for forming UV-treated, low-? dielectric films. The methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-carbon-containing precursor. The methods may further include generating a deposition plasma from the deposition precursors within the substrate processing region, and depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The as-deposited silicon-and-carbon-containing material may be characterized by greater than or about 5% hydrocarbon groups. The methods may still further include exposing the deposited silicon-and-carbon-containing material to ultraviolet light. The exposed silicon-and-carbon-containing material may be characterized by less than or about 2% hydrocarbon groups.Type: ApplicationFiled: October 5, 2020Publication date: April 7, 2022Applicant: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Sure Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
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Patent number: 11289369Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.Type: GrantFiled: June 8, 2020Date of Patent: March 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yi Ding, Shaunak Mukherjee, Bo Xie, Kang Sub Yim, Deenesh Padhi
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Publication number: 20220081765Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.Type: ApplicationFiled: September 14, 2020Publication date: March 17, 2022Applicant: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Kang Sub Yim, Yijun Liu, Li-Qun Xia, Sure Ngo
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Publication number: 20220084815Abstract: Embodiments of the semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (? value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.Type: ApplicationFiled: September 15, 2020Publication date: March 17, 2022Applicant: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Sure Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
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Publication number: 20210272800Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: ApplicationFiled: June 16, 2020Publication date: September 2, 2021Applicant: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Publication number: 20210050212Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.Type: ApplicationFiled: August 10, 2020Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
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Publication number: 20200388532Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.Type: ApplicationFiled: June 8, 2020Publication date: December 10, 2020Applicant: Applied Materials, Inc.Inventors: Yi Ding, Shaunak Mukherjee, Bo Xie, Kang Sub Yim, Deenesh Padhi
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Publication number: 20200126784Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1?x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.Type: ApplicationFiled: December 18, 2019Publication date: April 23, 2020Inventors: Xinhai HAN, Kang Sub YIM, Zhijun JIANG, Deenesh PADHI
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Publication number: 20200075321Abstract: Embodiments described herein provide a method of forming a low-k carbon-doped silicon oxide (CDO) layer having a high hardness by a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to a process chamber. A radio frequency (RF) power is applied at a power level and a frequency to the CDO precursor. The CDO layer is deposited on a substrate within the process chamber.Type: ApplicationFiled: August 27, 2019Publication date: March 5, 2020Inventors: Shaunak MUKHERJEE, Bo XIE, Kevin Michael CHO, Kang Sub YIM, Deenesh PADHI, Astha GARG
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Patent number: 10553427Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1-x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.Type: GrantFiled: April 20, 2018Date of Patent: February 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Xinhai Han, Kang Sub Yim, Zhijun Jiang, Deenesh Padhi
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Publication number: 20180315592Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1-x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.Type: ApplicationFiled: April 20, 2018Publication date: November 1, 2018Inventors: Xinhai HAN, Kang Sub YIM, Zhijun JIANG, Deenesh PADHI
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Patent number: 10113234Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.Type: GrantFiled: July 16, 2015Date of Patent: October 30, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Bo Xie, Alexandros T. Demos, Vu Ngoc Tran Nguyen, Kelvin Chan, He Ren, Kang Sub Yim, Mehul B. Naik
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Patent number: 9850574Abstract: A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately.Type: GrantFiled: February 16, 2015Date of Patent: December 26, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Taewan Kim, Kang Sub Yim, Alexandros T. Demos