Abstract: A method for processing a video with a dynamic video-based super-resolution network and a circuit system are provided. In the method, quality scores used to assess a quality of an input video are calculated based on image features of the input video. A moving average algorithm is performed on the quality scores of multiple frames of the input video for obtaining a moving average score. Two corresponding weight tables are selected according to the moving average score. The two weight tables are used to calculate a blending weight that is applied to a neural network super-resolution algorithm. The blending weight is applied to the neural network super-resolution algorithm, so as to produce an output video.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

Abstract: An image outputting device includes a sensing circuit for generating an image signal according to a configuration; a processing circuit, coupled to the sensing circuit, for performing an image processing on the image signal according to the configuration to generate an image processing result; and a controlling circuit, coupled to the sensing circuit and the processing circuit, for setting the configuration and entering an operating system after setting the configuration.

Abstract: A reaction kettle cleaning apparatus, includes a kettle body and a stirrer, the stirrer being located in the kettle body and including a stirring rod and a stirring portion, where a movable frame is disposed on the stirring rod and is movable along the stirring rod; and a cleaning device is disposed on the movable frame is configured to clean the kettle body; and the reaction kettle cleaning apparatus further includes a movable control apparatus configured to control the movable frame to move.

Abstract: A disassembling and discharging device for battery recycling includes a crushing assembly, a high pressure tank, at least one pressure relief tank, and a filtering tank. The crushing assembly is provided with a first feed port and a first discharge port communicated with the first feed port; the high pressure tank is provided with a first inner cavity for containing discharging liquid, and the first inner cavity is communicated with the first discharge port; the pressure relief tank is provided with a second inner cavity, and the second inner cavity is communicated with the first inner cavity; and the filtering tank is provided with a third inner cavity, and the third inner cavity is communicated with the second inner cavity.

Abstract: A gas absorption box includes a box body, at least one gas absorption member and an outer housing assembly, the box body has an accommodating cavity; the gas absorption member is elastic and is provided with a first inner cavity, and the first inner cavity is in communication with the outside of the box body; and the outer housing assembly is arranged in the accommodating cavity and is elastically connected to the box body, and the outer housing assembly has a second inner cavity for accommodating a gas absorbent, the second inner cavity being in communication with the first inner cavity, and the gas absorption member being capable of absorbing gas for the second inner cavity. When battery powder or some positive-electrode materials for batteries are transported, hydrogen generated by the battery powder or some positive-electrode materials for batteries gathers towards the upper portion of a ton bag.

Abstract: A semiconductor device includes a die, an encapsulant over a front-side surface of the die, a redistribution structure on the encapsulant, a thermal module coupled to the back-side surface of the die, and a bolt extending through the redistribution structure and the thermal module. The die includes a chamfered corner. The bolt is adjacent to the chamfered corner.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a composition comprising the same, an organic optoelectronic diode, and a display device. Chemical formula 1 is as defined in the specification.

Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.

Abstract: A method for making a plasmonic mushroom array includes: forming a plurality of metal nano-islands each having nanometer-range dimensions on a surface of a glass substrate; and subjecting to the glass substrate having the plurality of metal nano-islands formed thereon to reactive ion etching such that the plurality of metal nano-islands are converted to a plurality of mushroom-shaped structures each having a metal cap supported by a pillar made of a material of the glass substrate and each having dimensions smaller than the dimensions of the nano-islands, the plurality of mushroom-shaped structures being arranged in a substantially regular pattern with intervals smaller than average intervals between the nano-islands, thereby forming the plurality of nano-scale mushroom-shaped structures on the glass substrate that can exhibit localized surface plasmon resonance.

Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.

Abstract: A system for a semiconductor fabrication facility includes a maintenance tool, a control unit, a first track, a second track, a maintenance crane movably mounted on the first track, a plurality of first sensors disposed on the first track, an OHT vehicle movably mounted on the second track, and a second sensor on the OHT vehicle. The first sensors detect a location of the maintenance crane and generate a first location data to the control unit. The second sensor generates a second location data to the control unit.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.