Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

Abstract: A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.

Abstract: An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.

Abstract: A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

Abstract: A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ includes a fixed layer and a barrier layer on the fixed layer. Such an MTJ also includes a free layer interfacing with the barrier layer. The free layer has a crystal structure in accordance with the barrier layer. The MTJ further includes an amorphous capping layer interfacing with the free layer.

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

Abstract: An apparatus includes a polarizer, a first free layer, a second free layer, and an antiferromagnetic (AF) coupling layer. The polarizer has a perpendicular magnetic anisotropy (PMA). The polarizer, the first free layer, the second free layer, and the AF coupling layer are included in a spin-torque oscillator (STO). The AF coupling layer is positioned between the first free layer and the second free layer.

Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.

Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

Abstract: A busbar kit is provided. The busbar kit electrically connects a circuit breaker and a main busbar, and comprises an insulating case having an inner space, a branch busbar disposed in the insulating case such that the branch busbar is spaced apart from the main busbar and crosses over the main busbar, and a busbar connector for electrically connecting the main busbar and the branch busbar.

Abstract: A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.

Abstract: A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.

Abstract: An apparatus includes a polarizer, a first free layer, a second free layer, and an antiferromagnetic (AF) coupling layer. The polarizer has a perpendicular magnetic anisotropy (PMA). The polarizer, the first free layer, the second free layer, and the AF coupling layer are included in a spin-torque oscillator (STO). The AF coupling layer is positioned between the first free layer and the second free layer.

Abstract: Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding and methods of forming a magnetic shield processed at the wafer-level are disclosed. The method includes providing a magnetic shield at the front side of the chip, back side of the chip, and also in the deep trenches surrounding or adjacent to magnetic tunnel junction (MTJ) array within the prime die region. Magnetic shield in the deep trenches connects front side and back side magnetic shield. This magnetic shielding method is applicable for both in-plane and perpendicular MRAM chips. The MTJ array is formed in the prime die region and in between adjacent inter layer dielectric (ILD) levels of the upper ILD layer in the back end of line (BEOL) of the MRAM chip.

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

Abstract: A method and apparatus for detecting an X-ray, the apparatus includes a detector which comprises a pixel array in which a plurality of pixels for detecting an X-ray transmitted by a body to be examined are arranged in a matrix form, a read-out unit which reads out electrical signals corresponding to the detected X-ray from the pixel array, and a reset controller which controls the pixel array to be reset after the X ray is detected, by performing switching so that the plurality of pixels of the pixel array are commonly connected to the reset power source.

Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.

Abstract: A spin transfer torque magnetic random access memory (STT-MRAM) device and a method to perform operations of an embedded eFlash device are disclosed. The STT-MRAM device is configured to include an array of STT-MRAM bitcells. The array includes a plurality of bitlines (BLs) and a plurality of word lines (WLs), where the bitlines form columns and the wordlines form rows of STT-MRAM bitcells. Each STT-MRAM bitcell includes a magnetic tunnel junction (MTJ) element coupled in series to an access transistor having a gate terminal and source and drain terminals. The array includes a plurality of source lines (SLs) coupled to the source terminals of the access transistors. A SL of the plurality of SLs is coupled to source terminals of access transistors of two or more adjacent columns of the STT-MRAM cells. The shared SL is parallel to the plurality of BLs. The operations of such a STT-MRAM bitcell are configured to include: an initialization operation, a program operation, and a sector erase operation.

Abstract: An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.