Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first group identifier allocated to a first group of semiconductor wafers is detected. The first group of semiconductor wafers includes a first semiconductor wafer to be processed first among the first group. A first processor of a plurality of processors, which process respective ones of the first group of semiconductor wafers, are determined based on the first group identifier. The first processor is used for processing the first semiconductor wafer. The first semiconductor wafer is supplied to the first processor.

Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first group identifier allocated to a first group of semiconductor wafers is detected. The first group of semiconductor wafers includes a first semiconductor wafer to be processed first among the first group. A first processor of a plurality of processors, which process respective ones of the first group of semiconductor wafers, are determined based on the first group identifier. The first processor is used for processing the first semiconductor wafer. The first semiconductor wafer is supplied to the first processor.

Abstract: The focus monitor mark of the present invention includes two dot groups formed with a plurality of dots comprising a resist that is formed in a protruding manner with respect to a wafer surface, and a measurement region. The mark includes a dot pattern mark in which dot groups are arranged so that the dimensions of each dot increase in accordance with an increase in the distance of the dot from the measurement region, two hole groups comprising a plurality of holes formed in the resist on the wafer surface, and measurement region 3. The mark has a hole pattern mark in which each hole is arranged so that the dimensions of each hole increase in accordance with an increase in a distance of the hole from the measurement region.

Abstract: First, a hole pattern or a separation pattern of a first resist that is capable of supplying acid is formed on a semiconductor substrate. Then, a crosslinked film (organic frame) is formed on the side wall of the first resist pattern to obtain a resist pattern having a reduced hole diameter or separation width. Then, the hole diameter or the separation width is further reduced by causing thermal reflow of the crosslinked film. Finally, the semiconductor substrate is etched by using a resulting resist pattern as a mask.

Abstract: There is described a method of stably manufacturing a fine resist pattern narrower than the wavelength of exposing light from a stepper. Under the method, a resist pattern is formed on a semiconductor substrate through use of an acid catalyst chemically-amplified photoresist, and an organic film which includes an acid or which produces an acid on exposure to light is formed on the surface of the semiconductor substrate including the resist pattern. The organic film is then subjected to a heat treatment to thereby diffuse an acid. The surface layer of the resist pattern is made soluble in an alkaline developer, and the surface layer of the resist pattern is removed through use of the alkaline developer. As a result, a fine resist pattern is formed.