Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Abstract: An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent].

Abstract: A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 ?m or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 ?m or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.

Abstract: An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent.

Abstract: The present invention provides a method of producing oxide particles, comprising a step of mixing a metal carbonate with an acid to give a mixture, a step of heating the mixture to give a metal oxide and a step of pulverizing the metal oxide, and slurry wherein metal oxide particles obtained by the above method of producing are dispersed in an aqueous medium, a polishing slurry, and a method of polishing a substrate. Particularly, the present invention provides a polishing slurry containing cerium oxide particles obtained by using cerium carbonate as the metal carbonate material and oxalic acid as the acid. The present invention provides a method of producing oxide particles, wherein coarse particle- and abrasion powder-free fine particles can be rapidly obtained. The present invention also provides a polishing slurry using the oxide particles, which can maintain a suitable polishing rate, can reduce generation of scratches, and can accurately polish the surface of a semiconductor.

Abstract: A cerium salt wherein, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio to the cerium salt before dissolution and cerium oxide produced by processing the cerium salt at high temperatures. Scratch on a surface to be polished can be reduced when a cerium based polishing slurry containing the cerium oxide particles is used, since an amount of impurities in cerium oxide particles and cerium salt particles, raw material thereof, is reduced for high purification.

Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Abstract: A cerium salt wherein, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio to the cerium salt before dissolution and cerium oxide produced by processing the cerium salt at high temperatures. Scratch on a surface to be polished can be reduced when a cerium based polishing slurry containing the cerium oxide particles is used, since an amount of impurities in cerium oxide particles and cerium salt particles, raw material thereof, is reduced for high purification.

Abstract: A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 ?m or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 ?m or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.

Abstract: The present invention provides a method of producing oxide particles, comprising a step of mixing a metal carbonate with an acid to give a mixture, a step of heating the mixture to give a metal oxide and a step of pulverizing the metal oxide, and slurry wherein metal oxide particles obtained by the above method of producing are dispersed in an aqueous medium, a polishing slurry, and a method of polishing a substrate. Particularly, the present invention provides a polishing slurry containing cerium oxide particles obtained by using cerium carbonate as the metal carbonate material and oxalic acid as the acid. The present invention provides a method of producing oxide particles, wherein coarse particle- and abrasion powder-free fine particles can be rapidly obtained. The present invention also provides a polishing slurry using the oxide particles, which can maintain a suitable polishing rate, can reduce generation of scratches, and can accurately polish the surface of a semiconductor.

Abstract: A cerium salt wherein, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio to the cerium salt before dissolution and cerium oxide produced by processing the cerium salt at high temperatures. Scratch on a surface to be polished can be reduced when a cerium based polishing slurry containing the cerium oxide particles is used, since an amount of impurities in cerium oxide particles and cerium salt particles, raw material thereof, is reduced for high purification.

Abstract: A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 ?m or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 ?m or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.