Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate, a cell region, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductivity type impurity. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers includes a first region extending in the first direction from the first face toward a second face of the semiconductor substrate, and a second region extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region.

Abstract: A semiconductor device includes a semiconductor substrate, a cell region provided, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductive impurity, a plurality of second diffusion layers each disposed on an outer side of each of the plurality of first diffusion layers and having a concentration of the first conductive impurity lower than that of the first diffusion layers, and a plurality of conductive layers opposing the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate, the plurality of conductive layers electrically connected to the first diffusion layers, the plurality of conductive layers each having an outer end portion. On a lower side of the outer end portion, any one of the plurality of second diffusion layers is present.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, a first conductive member, a semiconductor member, and an insulating member. The first electrode includes a first face. The second electrode includes a first conductive region and a first conductive portion. The first conductive portion is electrically connected to the first conductive region. The first conductive member is provided between the first face and the first conductive region. The semiconductor member is provided between the first face and the second electrode. The semiconductor member includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a fifth semiconductor region of the first conductive type. The second semiconductor region is located between the third partial region and the third semiconductor region.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes, and first and second insulating film. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The third and fourth electrodes each extend into the semiconductor device form the front surface side. The third and fourth electrodes are electrically insulated from the semiconductor part by insulating films. The semiconductor part includes first to fourth layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is partially provided between the second layer and the second electrode. The fourth layer of the first conductivity type is provided in the second layer. The fourth layer is apart from the third layer.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and first-third and second-third electrodes. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes a first semiconductor layer of a first conductivity type, second and third semiconductor layers of a second conductivity type. The second and third semiconductor layers are arranged between the first layer and the second electrode. The first-third and second-third electrodes are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode and the second-third electrode. The second electrode includes a contact portion extending into the second semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer between the contact portion and the second-third electrode. The second semiconductor layer includes a first portion facing the third semiconductor layer via the contact portion.

Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of second conductivity type provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; a first trench reaching the first semiconductor layer from the second semiconductor layer; a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.

Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.

Abstract: A semiconductor device has a cell part and a terminal part set in the device. The terminal part encloses the cell part. The semiconductor device includes a first electrode, a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, and an insulating layer. The first semiconductor layer is formed above the first electrode. The second semiconductor layer is provided in an upper portion of the first semiconductor layer, and has an impurity concentration profile along a vertical direction including a plurality of peaks. The insulating layer is provided on the second semiconductor layer.

Abstract: A semiconductor device includes an element region and a termination region. The element region includes a first semiconductor region of a first conductivity type located on a first electrode and a second semiconductor region of a second conductivity type located on the first semiconductor region. The second semiconductor region is electrically connected with a second electrode. The termination region includes a third semiconductor region of the first conductivity type, a first diffusion layer of the second conductivity type located at a surface of the third semiconductor region, and a second diffusion layer of the second conductivity type. The third semiconductor region is located outward of the first semiconductor region. The first diffusion layer surrounds the element region. The second diffusion layer surrounds the element region, and is deeper than the first diffusion layer.

Abstract: A method of separating a support substrate and a wafer adhered to the support substrate includes inserting a trigger member into a space between the support substrate and the wafer. The space opens on a gap region of the support substrate. The gap region is within an outer periphery of a base member of the support substrate. The base member has an adhesive layer contacting the wafer. The adhesive layer does not extend to an edge of the base member facing the gap region at the space. The wafer and the base member are contacted by the trigger member which promotes separation of the wafer and the support substrate from each other.

Abstract: A semiconductor device includes first and second semiconductor layers of a first conductivity type, a third semiconductor layer of a second conductivity type, a plurality of electrodes, and a first insulating film. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer with a first surface at a side opposite to the first semiconductor layer. The electrodes extend from the first surface into the second semiconductor layer. A first insulating film provided between the second and third semiconductor layers and each of electrodes. The electrodes include first and second electrode groups. The first electrode group is arranged in one column in the first direction and apart from each other by a first distance. The first and second electrode groups are apart from each other by a second distance in the second direction.

Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.

Abstract: A semiconductor device has a cell part and a terminal part set in the device. The terminal part encloses the cell part. The semiconductor device includes a first electrode, a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, and an insulating layer. The first semiconductor layer is formed above the first electrode. The second semiconductor layer is provided in an upper portion of the first semiconductor layer, and has an impurity concentration profile along a vertical direction including a plurality of peaks. The insulating layer is provided on the second semiconductor layer.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part includes first to third layers. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided on a front surface of the semiconductor part. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is provided between the second layer and the second electrode. The second electrode includes a buried contact portion and a surface contact portion. The buried contact portion extends into the second layer from the front surface of the semiconductor part and contacts the second layer. The surface contact portion contacts the third layer at the front surface of the semiconductor part.

Abstract: A method of separating a support substrate and a wafer adhered to the support substrate includes inserting a trigger member into a space between the support substrate and the wafer. The space opens on a gap region of the support substrate. The gap region is within an outer periphery of a base member of the support substrate. The base member has an adhesive layer contacting the wafer. The adhesive layer does not extend to an edge of the base member facing the gap region at the space. The wafer and the base member are contacted by the trigger member which promotes separation of the wafer and the support substrate from each other.

Abstract: A semiconductor device includes first and second electrodes, first semiconductor region of first conductivity type between the first and second electrodes, a second semiconductor region of second conductivity type between the first semiconductor region and the first electrode, a third semiconductor region of the second conductivity type between the first semiconductor region and the second electrode, a fourth semiconductor region of the first conductivity type between the third semiconductor region and the second electrode, a plurality of third electrodes between the second electrode and the first semiconductor region, wherein a gate insulating film is between each third electrode and the third semiconductor region, a fourth electrode extending between the third semiconductor region and the second electrode and electrically connected to the third semiconductor region and the second electrode, and a first insulating film between the second and electrodes.

Abstract: An aspect of the present embodiment, there is provided a method of manufacturing a semiconductor device, including adsorbing a photolytic group on a hydrophilic surface of a substrate on which a concave portion is provided, irradiating a first area of the substrate with light to transform the photolytic group to a hydrophobic group to modify a surface of the first area, selectively coating a resist on a second area which is a portion of the substrate other than the first area modified by hydrophobic group.

Abstract: An aspect of the present embodiment, there is provided a method of manufacturing a semiconductor device, the method includes providing trenches in an end terminal area of a substrate, the end terminal area surrounding an element area of the a substrate, the trenches surrounding the element area, filling a fluent material mixed with carbonate, oxide and solvent in the each of the trenches, burning the fluent material in the trench to embed an insulator in the trench, and providing an element unit in the element area.