Patents by Inventor Kaori KIRIKIHIRA

Kaori KIRIKIHIRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
    Patent number: 9899211
    Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.
    Type: Grant
    Filed: February 4, 2015
    Date of Patent: February 20, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Kaori Kirikihira, Yugo Orihashi, Satoshi Shimamoto
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
    Publication number: 20150214030
    Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.
    Type: Application
    Filed: February 4, 2015
    Publication date: July 30, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kaori KIRIKIHIRA, Yugo ORIHASHI, Satoshi SHIMAMOTO
  • Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
    Patent number: 8987146
    Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: March 24, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Kaori Kirikihira, Yugo Orihashi, Satoshi Shimamoto
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
    Publication number: 20130237064
    Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.
    Type: Application
    Filed: March 7, 2013
    Publication date: September 12, 2013
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kaori KIRIKIHIRA, Yugo ORIHASHI, Satoshi SHIMAMOTO