Abstract: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at ?WG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle ?SM=sin?1 [nLE·sin(?WG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.

Abstract: A modulating light having a wavelength of 600 nm to 1000 nm excluding a range of 870 nm to 910 nm is irradiated to a portion around hair roots such that a light absorptive component existing in a human body around the hair roots absorbs the light for modulating hair growth. The light having the wavelength in the above range enhances hair growth free from causing inflammation, yet safely and gentle to skin.

Abstract: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at ?WG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle ?SM=sin?1 [nLE·sin(?WG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.

Abstract: A modulating light having a wavelength of 600 nm to 1000 nm excluding a range of 870 nm to 910 nm is irradiated to a portion around hair roots such that a light absorptive component existing in a human body around the hair roots absorbs the light for modulating hair growth. The light having the wavelength in the above range enhances hair growth free from causing inflammation, yet safely and gentle to skin.

Abstract: A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.

Abstract: When a laser diode assembly is manufactured, bulb-shaped solder residue is not formed on a laser diode device, a submount, or a heatsink. A laser diode assembly (30) comprises a laser diode device (12). A submount (16) is jointed on a substrate side of the laser diode device (12) with a first solder layer (14) in between. A heatsink (20) is jointed on a rear face side of the submount (16) with a second solder layer (18) in between. The submount (16) is provided with a submount groove (32) formed along border of a joint area jointed with the laser diode device (12) and an extension groove (36) extending to edges of the submount (16).

Abstract: A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.

Abstract: When a laser diode assembly is manufactured, bulb-shaped solder residue is not formed on a laser diode device, a submount, or a heatsink. A laser diode assembly (30) comprises a laser diode device (12). A submount (16) is jointed on a substrate side of the laser diode device (12) with a first solder layer (14) in between. A heatsink (20) is jointed on a rear face side of the submount (16) with a second solder layer (18) in between. The submount (16) is provided with a submount groove (32) formed along border of a joint area jointed with the laser diode device (12) and an extension groove (36) extending to edges of the submount (16).

Abstract: A method of manufacturing a semiconductor device capable of improving adhesibility between a semiconductor layer and an electrode, while reducing contact resistance therebetween. A resist film is formed over the entire surface of an insulating layer formed by deposition or others. Then, in the resist film, provided is an opening corresponding to the p-side electrode pattern. Meanwhile, the residue of resist may attach to the opening, but is removed through light ashing treatments using oxygen, while a p-side contact layer is protected by the insulating layer. After that, with the resist film used as a mask, an opening in the insulating layer and a p-side electrode are formed by self-aligning. Damage to the surface of the p-side contact layer can be effectively suppressed. The p-side electrode can be formed on the clean surface of the p-side contact layer.