Patents by Inventor Kaori Shirahata
Kaori Shirahata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10361063Abstract: A charged particle detector including a scintillator that is irradiated with charged particles, a fluorescent film being in contact with a first surface facing a second surface of the scintillator, the second surface being irradiated with the charged particles, and a photodetector that detects luminescence of the fluorescent film, wherein the fluorescent film has a plurality of regions, the plurality of regions respectively have phosphors that absorb luminescence of the scintillator and emit light with different wavelengths from one another, and a charged particle beam device using the charged particle detector.Type: GrantFiled: March 12, 2018Date of Patent: July 23, 2019Assignee: Hitachi, Ltd.Inventors: Yasuhiro Shirasaki, Momoyo Enyama, Kaori Shirahata, Makoto Sakakibara
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Publication number: 20180261425Abstract: A charged particle detector including a scintillator that is irradiated with charged particles, a fluorescent film being in contact with a first surface facing a second surface of the scintillator, the second surface being irradiated with the charged particles, and a photodetector that detects luminescence of the fluorescent film, wherein the fluorescent film has a plurality of regions, the plurality of regions respectively have phosphors that absorb luminescence of the scintillator and emit light with different wavelengths from one another, and a charged particle beam device using the charged particle detector.Type: ApplicationFiled: March 12, 2018Publication date: September 13, 2018Inventors: Yasuhiro SHIRASAKI, Momoyo ENYAMA, Kaori SHIRAHATA, Makoto SAKAKIBARA
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Patent number: 10014160Abstract: The scanning electron microscope includes: an electron source; a first deflector for deflecting a primary electron beam emitted from the electron source; a second deflector for focusing the primary electron beam deflected by the first deflector and deflecting a second electron from a sample, which is generated the focused primary electron beam, to the outside of the optical axis; a voltage applying unit for applying a negative voltage to the sample to decelerate the primary electron beam; a spectrometer for dispersing the secondary electron; a detector for detecting the secondary electron passing through the spectrometer; an electrostatic lens provided between the second deflector and the spectrometer; and a voltage control unit that controls the voltage applied to the electrostatic lens based on the negative voltage applied to the sample. The electrostatic lens allows the deflecting action to be overlapped with the converging action.Type: GrantFiled: April 20, 2015Date of Patent: July 3, 2018Assignee: Hitachi High-Technologies CorporationInventors: Kaori Shirahata, Daisuke Bizen, Makoto Sakakibara, Yasunari Sohda, Hajime Kawano, Hideyuki Kazumi
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Publication number: 20170186583Abstract: The scanning electron microscope includes: an electron source; a first deflector for deflecting a primary electron beam emitted from the electron source; a second deflector for focusing the primary electron beam deflected by the first deflector and deflecting a second electron from a sample, which is generated the focused primary electron beam, to the outside of the optical axis; a voltage applying unit for applying a negative voltage to the sample to decelerate the primary electron beam; a spectrometer for dispersing the secondary electron; a detector for detecting the secondary electron passing through the spectrometer; an electrostatic lens provided between the second deflector and the spectrometer; and a voltage control unit that controls the voltage applied to the electrostatic lens based on the negative voltage applied to the sample. The electrostatic lens allows the deflecting action to be overlapped with the converging action.Type: ApplicationFiled: April 20, 2015Publication date: June 29, 2017Inventors: Kaori SHIRAHATA, Daisuke BIZEN, Makoto SAKAKIBARA, Yasunari SOHDA, Hajime KAWANO, Hideyuki KAZUMI
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Pattern critical dimension measurement equipment and method for measuring pattern critical dimension
Patent number: 9520266Abstract: Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample.Type: GrantFiled: August 9, 2014Date of Patent: December 13, 2016Assignee: Hitachi High-Technologies CorporationInventors: Kaori Shirahata, Yasunari Sohda, Makoto Sakakibara, Daisuke Bizen, Hajime Kawano, Hideyuki Kazumi -
PATTERN CRITICAL DIMENSION MEASUREMENT EQUIPMENT AND METHOD FOR MEASURING PATTERN CRITICAL DIMENSION
Publication number: 20150041648Abstract: Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample.Type: ApplicationFiled: August 9, 2014Publication date: February 12, 2015Inventors: Kaori Shirahata, Yasunari Sohda, Makoto Sakakibara, Daisuke Bizen, Hajime Kawano, Hideyuki Kazumi -
Patent number: 8637820Abstract: Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector (201) is disposed above a magnetic lens (207), and a control electrode (202) that accelerates or decelerates electrons is provided so at to overlap (in such a manner that the height positions overlap with respect to the vertical direction) with the electromagnetic deflector (201). In wide field polarization, electrodes are accelerated, and in tilted beam formation, electrons are decelerated.Type: GrantFiled: February 18, 2011Date of Patent: January 28, 2014Assignee: Hitachi High-Technologies CorporationInventors: Yasunari Sohda, Takeyoshi Ohashi, Kaori Shirahata, Keiichiro Hitomi
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Patent number: 8478021Abstract: In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (1), a deflection control portion (8) which allows an electron beam to scan, a focus control portion (10) and an astigmatism correction portion (3) for the electron beam, an image processing portion (11), and a switching portion (9) which switches scan conditions when obtaining pattern information of the sample (1001) surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.Type: GrantFiled: January 13, 2010Date of Patent: July 2, 2013Assignee: Hitachi High-Technologies CorporationInventors: Kaori Shirahata, Yoshinori Nakayama, Keiichiro Hitomi, Muneyuki Fukuda, Yasunari Sohda
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Publication number: 20120286158Abstract: Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector (201) is disposed above a magnetic lens (207), and a control electrode (202) that accelerates or decelerates electrons is provided so at to overlap (in such a manner that the height positions overlap with respect to the vertical direction) with the electromagnetic deflector (201). In wide field polarization, electrodes are accelerated, and in tilted beam formation, electrons are decelerated.Type: ApplicationFiled: February 18, 2011Publication date: November 15, 2012Inventors: Yasunari Sohda, Takeyoshi Ohashi, Kaori Shirahata, Keiichiro Hitomi
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Publication number: 20110274341Abstract: In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (1), a deflection control portion (8) which allows an electron beam to scan, a focus control portion (10) and an astigmatism correction portion (3) for the electron beam, an image processing portion (11), and a switching portion (9) which switches scan conditions when obtaining pattern information of the sample (1001) surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.Type: ApplicationFiled: January 13, 2010Publication date: November 10, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Kaori Shirahata, Yoshinori Nakayama, Keiichiro Hitomi, Muneyuki Fukuda, Yasunari Sohda