Abstract: A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled.

Abstract: A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled.

Abstract: In related art, when a location to be analyzed is selected from inspection data, a relatively highly critical defect among entire defects is not selected as a defect to be analyzed. Further, when a mark is placed in a fixed position associated with a defect, the mark affects the defect itself depending on the shape and size of the defect, which is problematic in the following analysis made in an analysis apparatus. Moreover, in the case of a wafer with no pattern, a defect invisible to a SEM cannot be marked. To select a highly critical defect as a defect to be analyzed, an automatic classification result from a review SEM is used to select a defect to be analyzed. Further, to avoid an effect on a defect itself, a mark is placed in a position associated with the defect with the distance from the defect to the marking position changed on a defect basis.